and broadening its homeland defense capabilities
the commander of Army Space and Missile Defense Command said during a media roundtable
“We know from Army warfighting concepts that we need space capability
These soldiers will become the experts we turn to during the next conflict,” Lt
“Our Army space professionals support unique assets to interdict or disrupt adversaries’ use of space capabilities
ensuring Army forces gain and maintain the initiative to fight from positions of relative advantage in all domains.”
which is on track to become official by October 2026
will ensure that enlisted soldiers gain expertise in space operations
the preponderance of expertise and experience in space operations resides in the officer corps instead of the noncommissioned officer corps,” he said
“This new space operations MOS will ensure that specialists through command sergeants major arrive at Army space formations with experience and expertise in space operations.”
the MOS also will offer stability for soldiers
the top enlisted leader of Army Space and Missile Defense Command
“Establishing the space operations MOS is a zero-growth effort,” Foley said in an Army news release
“A space enlisted MOS will help stabilize career progression and retention for soldiers and NCOs who temporarily leave their current MOSs for three years to support space operations.”
Army Space and Missile Defense Command is also finalizing a new approach to secure the homeland through a broader missile defense system
“As the architecture is finalized with the capabilities that will potentially
eventually support a Golden Dome-type of defense
our formation is expected to have a larger role,” he said
“There'll be a natural potential for us to grow in the operational framework under [U.S
The Army’s air and missile defense capabilities remain critical to the future fight
[counter-unmanned aircraft systems] capabilities are critical capabilities on the battlefield,” he said
“We're finding more and more through lessons learned that being able to operate in a denied or degraded environment is essential.” 
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Cast your votes for the 2025 DefenseScoop 50 — voting is open through April 18
The Marine Corps is looking at growing its software factory and potentially creating a new military occupational specialty for it
according to an official involved in the program
The Marine Corps Software Factory was launched in 2023 as a three-year pilot in Austin
The aim was to demonstrate a scalable software development capability led by servicemembers
Personnel there have been training others and building apps and other tools for different elements of the force
&ldquo;Our ultimate goal is to provide commanders with the organic software development capability to rapidly research problems and deliver scalable solutions into the hands of warfighters
these Marines will return to the [Fleet Marine Force] with the critical skills they need in order to provide this service to their units
And that&rsquo;s something that they can do in perpetuity
that just would become essentially their new job
said during a presentation Thursday at the Modern Day Marine conference
There are several different types of jobs at the software factory
Officials are pondering what comes next and how to move forward once the pilot program ends and the software factory becomes a more permanent organization
we&rsquo;re going through the DOTMILPF [doctrine
and personnel] working groups to actually figure out what the lifecycle would be
it&rsquo;s not as simple as just &hellip; &lsquo;go forth and do great things.&rsquo; You have to figure out what the career progression would be
because you&rsquo;re essentially creating an entirely new MOS,&rdquo; Atkinson told DefenseScoop
using an acronym to refer to military occupational specialty
&ldquo;Without trying to speak out of turn
the general idea is that once we become a real unit
we would grow in size from the 15 that we&rsquo;re at now to about 50 or 60 &mdash; and that&rsquo;s again subject to the Marine Corps&rsquo; approval
And then from there we would have the potential to either start recruiting people before they even show up to boot camp
get them to sign up to be a software engineer as their actual primary MOS
or we would open it up to the rest of the Marine Corps for [lateral] moves just the way that we&rsquo;ve done now
I&rsquo;m an infantry officer who came over here to do this
but the idea would be that we would be about triple in size
And that would be just one cohort of students per year producing about 20 new Marines &hellip; to go out to the fleet,&rdquo; Atkinson added
Marine Corps leadership hasn&rsquo;t signed off on the idea yet
And &hellip; kind of the analogy I would draw is
And there are subsets of the infantry field where you have a rifleman
Something that we&rsquo;re toying around with as well is maybe having kind of a similar spin where you have a guy who&rsquo;s a product manager and he trains to the product manager job
There&rsquo;s a lot of different directions that we&rsquo;re looking at going,&rdquo; Atkinson said
After Marines finish their time at the software factory in Austin
they could undergo a permanent change of station and join a team working with a larger unit
&ldquo;Our vision &mdash; and something that the Marine Corps is figuring out right now &mdash; is you would then PCS to like a software development platoon
that&rsquo;s co-located with the MEFs &hellip; with the ability to generate capacity for the commanders
And how the commanders use them is totally up to them at that point
But the idea would be you have a different software development unit that is organic to &hellip; all the large-scale units within the Marine Corps,&rdquo; Atkinson explained
Those experts could solve problems for the units they&rsquo;re assigned to work with
because that&rsquo;s kind of where we&rsquo;re thinking right now,&rdquo; Atkinson told DefenseScoop
There could be &ldquo;a group of software engineers at the MEF who can answer problems for the MEF specifically
So if the MEF has a unique data requirement that they just need
they need something while they wait for a lasting solution from the acquisitions community
or there is nothing coming [and] they just need something on their own
like a TAK plugin &mdash; these would be the guys that would handle that stuff
So it&rsquo;s not so much that they&rsquo;re like software techs to help with like IT problems
It would be building solutions for the MEFs specifically.&rdquo;
The fertilizer maker delivered a negative earnings surprise of around 17.2%, on average, over the trailing four quarters. It delivered a negative earnings surprise of around 15.1% in the last reported quarter. The company’s first-quarter results are likely to reflect the impacts of weak fertilizer prices. It is expected to have gained from healthy fertilizer demand and cost-management actions.
Mosaic’s shares have gained 5.1% in the past year compared with the Zacks Fertilizers industry’s 9.2% rise.
Let’s see how things are shaping up for this announcement.
Our proven model predicts an earnings beat for Mosaic this time around. The combination of a positive Earnings ESP and a Zacks Rank #1 (Strong Buy), 2 (Buy) or 3 (Hold) increases the chances of an earning beat.
Earnings ESP: Earnings ESP for MOS is +15.82%. The Zacks Consensus Estimate for the first quarter is currently pegged at 39 cents. You can uncover the best stocks to buy or sell before they’re reported with our Earnings ESP Filter.
Zacks Rank: MOS currently carries a Zacks Rank #3.
(Find the latest EPS estimates and surprises on Zacks Earnings Calendar.)
The Zacks Consensus Estimate for Mosaic’s first-quarter consolidated sales is currently pegged at $2,665.9 million, calling for a decline of 0.5% from the year-ago quarter’s tally.
Mosaic is expected to have gained from favorable demand for phosphate and potash in the March quarter, aided by favorable agricultural conditions. Attractive farm economics is driving demand for fertilizers globally. Farmer economics remain favorable in most global growing regions due to strong crop demand and affordable inputs. Demand for grains and oilseeds remains high globally. 
Mosaic is also taking action to reduce costs amid a still challenging operating environment. Its actions to improve its operating cost structure through transformation plans are expected to have aided profitability in the first quarter. MOS remains on track with its cost-reduction plan, which is expected to drive $150 million in run-rate cost reductions by the end of 2025.
Our estimate for average selling price per ton for the Potash segment is pegged at $209, reflecting a year-over-year decline of 29.6%. We also expect average selling price per ton for the Phosphate unit to be $609, indicating a 10% decline from the prior-year quarter.
The Mosaic Company price-eps-surprise | The Mosaic Company Quote
Basic Materials Stocks That Warrant a Look
Here are some companies in the basic materials space you may want to consider as our model shows they too have the right combination of elements to post an earnings beat this quarter:
ICL Group Ltd ICL, scheduled to release earnings on May 19, has an Earnings ESP of +12.50% and carries a Zacks Rank #3. You can see the complete list of today’s Zacks #1 Rank stocks here.
The consensus estimate for ICL’s earnings for the first quarter is currently pegged at 8 cents.
IAMGOLD Corporation IAG, slated to release earnings on May 6, has an Earnings ESP of +9.96% and carries a Zacks Rank #3 at present.
The consensus mark for IAG’s first-quarter earnings is currently pegged at 10 cents.
Nutrien Ltd. NTR, scheduled to release earnings on May 7, has an Earnings ESP of +2.41%.
The Zacks Consensus Estimate for NTR&#x27;s earnings for the first quarter is currently pegged at 33 cents. NTR currently carries a Zacks Rank #3.
This article originally published on Zacks Investment Research (zacks.com).
Copyright © 2025 FactSet Research Systems Inc.© 2025 TradingView
In the 25 years that NBC Sports Group has been broadcasting the Kentucky Derby
its coverage has gone from a 90-minute broadcast on a single broadcast network to a multi-day extravaganza of racing and pageantry that includes 12-plus hours of live programming — and 17 total races — across NBC
It’s a monumental endeavor that requires months of planning and coordination
a crew of hundreds onsite and at NBC Sports Group’s Stamford
and an attention to detail that is second to none
Mike Tirico (left) will anchor Saturday’s Derby coverage along with analysts Randy Moss (center) and Jerry Baily
“The Kentucky Derby is a can’t-miss event every spring,” says Ken Goss
“I’m proud to work with talented and tireless technical and operations teams to provide the infrastructure and backbone for production and the announcers to present a best-in-class show every year.”
It’s not just about the volume of coverage
NBC’s efforts on the technology side at Churchill Downs have grown by leaps and bounds as well
This year’s Run for the Roses broadcast will feature a wealth of new cutting-edge cameras and production tools
RED Digital Cinema’s new 4K 60p “cine-broadcast” camera system on the red carpet
four 1080p HFR HDR Nucleus cameras (up from two last year) on the finish line for both dirt and grass tracks
iPhone cameras capturing immediate live reactions from owners/trainers
and a Proton Cam with micro pan/tilt head in the New Starting Gate Pavilion area by the touchscreen area
This year’s 68-camera complement includes a variety of new tools as well as some NBC Sports Derby staples
The team is also outfitting a Canon EOS C80 6K full-frame cinema camera on a wireless RF gimbal setup and deploying a Sony PDT-FP1 portable data transmitter for C2C use
immersive-experience–tech provider Cosm will be at the Derby for the first time
placing cameras around the track to provide views of all the action to fans at Cosm locations
An SRT feed offering a live look-in during the races will be sent from the Cosm LA dome to be integrated into NBC’s broadcast
“This year’s Derby is particularly exciting for many of our teams at NBC Sports because of its unique intersection between sports and entertainment,” says Kamal Bhangle
live event workflow and remote engineering
we’re able to debut several new technologies and workflow efficiencies
Our goal is to evaluate [their] performance at Churchill Downs and determine how they might benefit our other properties across our portfolio and make a big
NBC will be using a new RED cine-broadcast HFR camera running in 4X super-slo-mo to capture fashion
It marks one of the first integrations of RED Digital Cinema’s all-new advanced cine-broadcast solution
which supports live broadcasting of up to two channels of 4K 60p (HDR/SDR) via 12G-SDI and IP broadcasting compliant with SMPTE ST 2110 (TR-08) and up to a 4K 60p JPEG-XS feed
“The RED camera is primarily something we will use on the red carpet to cover fashion and flavor of the day,” says Schanzer
it’s a first-time use case where the RED camera footage — which we traditionally use in a postproduction way
dropped into our edit system for postproduction bumpers that we build — will go directly into EVS for our use in the truck so we can turn it around in real time as part of our live coverage.”
The system features a robust LEMO SMPTE 311M/304M hybrid fiber optical cable connector linked to a rack-mountable 2RU full-rack or 4RU half-rack base station
The module further expands workflows with advanced slow motion
and real-time 8K 120-fps R3D streaming through the RED Connect license-enabled feature
is the integration with the EVS XT-VIA live-production server
This allows broadcasters to enhance their workflows with up to 4X super-slow-motion at 4K and 1080p
while simultaneously delivering two baseband channels through the RED cine-broadcast module
This capability is powered by RED’s license-enabled RED Connect feature
which enables IP live streaming of R3D cameras and unlocks advanced workflows
NBC will also be testing the system’s camera-to-cloud capabilities, such as those with AWS and RED <a href="https://urldefense.com/v3/__https:/www.red.com/v-raptor*phantom-track__;Iw!!PIZeeW5wscynRQ!ryjh46z9fyaAWeoPz18hVdmOv-SgK3iLcxoOfEemmbaHr_wUQG-a24doAKHHG_IYtUSkiKZywtRo_M1XXD1mEQ$">Phantom Track functionality</a>
which captures final pixel and green screen simultaneously from a single V-RAPTOR XL [X] or V-RAPTOR [X] camera and allows productions to distinctly monitor or broadcast each track independently
Beverly Hills Aerials will send up two live drones
one providing race coverage and the other capturing the pageantry between races
NBC has used a heavy-lift drone on Derby Day primarily to cover the races with a bit of pageantry mixed in
the heavy drone will be used exclusively to cover the racing
more agile hummingbird drone will cover the spectacle around the grounds
“It will allow us to fly closer to fans and maybe over some fans
creating some more-dynamic shots than we’ve been able to do with our drone in the past,” says NBC Sports Senior Producer
“We’re really excited about that opportunity
not to mention all the fans dressed up to the nines
That will give us the ability to show what they’re doing.”
NEP Specialty Capture has rolled out four 1080p HDR HFR Nucleus cameras — up from the two used in the camera’s Derby debut last year — to provide a unique super-slo-mo look at photo finishes
there will be two Nucleus cameras on each finish line (on both dirt and grass tracks)
up from one on each finish line for last year’s debut
Introducing the Nucleus camera last year turned out to be perfect timing: it clearly captured the <a href="https://www.youtube.com/watch?v=C5Yb-2xEMzg">three-way photo finish</a>
before the official photo was even shown on-air
“It became the defining look to adjudicate that finish and determine as quickly as we could that Mystik Dan would be the winner,” says Schanzer
two that will be on the wire exactly like that
and two others on the opposite side that will create more of an artsy look.”
Multiple iPhones outfitted on gimbals will be used as POV cameras to capture immediate live reactions from the horses’ owners and trainers
The feeds will be transmitted through an AT&amp;T private 5G network
and NBC will deploy the LiveU app and two LiveU LU800 multicam live-transmission field units to deliver these iso feeds to the production team in the truck
NBC has erected numerous locations and vantage points to showcase the races and pageantry at Churchill Downs
The main announce position is located at Turn 1
where Mike Tirico will anchor Saturday’s coverage along with analysts Jerry Baily and Randy Moss
NBC’s third-floor position in the Paddock is back in its second year; the second floor
is the site of fashion updates by Rebecca Lowe and Dylan Dreyer
and Goal Zone are live onsite from a set on the first floor of the Paddock on Thursday
This year’s most notable change is a new location in the Starting Gate Pavillion for NBC’s betting-analysis segments featuring handicappers Eddie Olczyk and Matt Bernier and NBC Chief Data Analyst Steve Kornacki
Host/reporter Ahmed Fareed and reporters Britney Eurton
and Nick Luck will deliver live reports from throughout the grounds
race caller Larry Collmus — the only member of the announce team to work all 25 of NBC Sports’ Kentucky Derby presentations — is back to call the racing action
NEP ND-2 mobile unit is on hand at the Churchill Downs production compound
and NEP Specialty Capture (encompassing the teams formerly known as BSI
and AVS) is handling all RF elements (both video and audio) and providing all robos and specialty cameras
NEP Rentals (né Bexel) is providing audio rentals; Sunbelt Rentals is powering the compound
this year’s 68-camera complement includes NBC Sports Derby staples: a SkyCam (featuring new pick points to provide extended coverage of the paddock)
a Bat Cam flying alongside the horses as they race down the backstretch
an ultra-high-speed Phantom camera for super-slo-mo replays and reactions
multiple jockey cameras and a camera on the outrider
NBC&#8217;s complement includes one Sony HDC-4800 (running in 4K at 4X slo-mo)
eight HDC-P50&#8217;s (including three RF wireless systems)
more than two dozen HDC-5500&#8217;s (running at various frame rates)
Canon is providing a full arsenal of lenses — including 50-1000
and 15-120 lenses to support many of the new-technology deployments — and Fujinon will supply a specialty 4K DUVO 25-1000 long lens
NBC’s Derby production relies heavily on Dante infrastructure
and communication units in the field and upwards of 180 Dante devices in total
more than 25 high-powered RF microphones will capture the sound of announcers and horses
five Calrec audio consoles are integrated with each other
along with two Calrec RP1 units to help facilitate integration from the remote-production facility in Stamford
is being produced remotely from a control room in Stamford
deploying NBC’s custom Newbert and TX Kit for connectivity
eliminating the need for another mobile unit onsite
In addition to establishing a private 5G cellular network at the venue
AT&amp;T is serving NBC’s transmission/connectivity needs
They include six JPEG-XS outbound and six JPEG-XS returns
as well as 28 paths out and 12 returns through Appear frames via NBC’s Golf TX Kit for the Stamford production of earlier races
NBC’s transmission scheme comprises 52 fiber/encoded paths and two satellite uplinks
The operations team is being led once again by Tim DeKime
Andre Vawdrey play key roles in the operation
Schanzer will be at the front bench for the main NBC broadcast on Saturday alongside director Kaare Numme
Saturday’s early-race coverage will be produced by Billy Matthews and directed by Jared Sumner in Stamford
With <a href="https://www.sportsvideo.org/2024/05/06/nbc-sports-and-churchill-downs-extend-historic-partnership-kentucky-derby-to-be-presented-on-nbc-and-peacock-through-2032/">a new extension that will keep the Derby on NBC platforms through 2032</a>
this weekend’s production will be the start of a new chapter for the broadcaster
one that Schanzer can’t wait to get started on
NBC Sports Technical and Operations leaders at Churchill Downs: (from left) Laura Cronin
“We’ve been onsite since Monday [and are] really looking forward to Derby 151,” she says
the Derby brings something special and unexpected
We’re looking forward to bringing that to all of you
We’re honored to put on NBC’s 25th broadcast of the Kentucky Derby
It’s an event we look forward to every year.”
NBC Sports’ Derby Day coverage features 10 races across 7½ hours — five hours on NBC and Peacock on Saturday (2:30 p.m
which follows the opening 2½ hours beginning at noon on USA Network and Peacock
Live coverage from Churchill Downs starts with five hours of Kentucky Oaks Day today beginning at 1 p.m
&copy; 2025 Sports Video Group. All rights reserved. Site by <a href="https://www.brightgreendesign.com/" target="_blank">Brightgreen Design</a>/<a href="https://www.arturan.com/" target="_blank">Arturan</a>/<a href="https://www.sferainteractive.com/" target="_blank">Sfera Interactive</a>
the security forces seem to have made no headway in locating the ultras in the Karreguttala area in Chhattisgarh
even though they have been combing the hillocks using the latest technology for the last few days
Bandi Sanjay Kumar with Union Defence Minister Rajnath Singh
Synopsis: Union Minister of State for Home Affairs Bandi Sanjay Kumar made it clear that there was no question of the Union government holding talks with the Maoists if they were not prepared to abjure violence
The Union Minister also slammed Telangana Chief Minister A Revanth Reddy and BRS President K Chandrashekar Rao for coming out in support of the Maoists
the Union government appears to have hardened its stand on Maoists
Union Minister of State (MoS) for Home Affairs Bandi Sanjay Kumar on Sunday
made it clear that there was no question of the Union government holding talks with the Maoists if they were not prepared to abjure violence
His reiteration of the Union government&#8217;s stand on holding talks with the Maoists came as a douche of cold water to the Maoists
It could not have come at a worse time as they were just beginning to allow themselves the luxury of hope that the Union government would stop bearing down on them
bowing to the public opinion building to the contrary
said: &#8220;There is no question of holding talks with the Naxalites
How can we hold talks with a banned organisation whose members continue to hold firearms?&#8221;
But the chief minister says the problem has to be seen from a sociological perspective
The Maoists are killing policemen by blowing up land mines
Let Revanth Reddy be reminded that it was the Congress which had imposed a ban on the Naxalites
It was the Naxalites who killed Congress leader D Sripada Rao
who is known to have had no enemies at all,&#8221; he said
The Union minister said that both Revanth Reddy and Chandrashekar Rao were vying with each other to put forth the demand that the hunt for the Maoists should stop and talks should be held with them
&#8220;How can any government hold talks with the Maoists who continue to hold firearms?&#8221; he asked and wondered whether they supported the killing of the policemen
He said: &#8220;In Mahamutharam mandal in Karimnagar
the Naxalites had killed an SI (Sub Inspector) ahead of an auspicious ceremony in his home and shot and killed another constable as he was celebrating his son&#8217;s birthday
When KCR (Chandrashekar Rao) was in the TDP
Maoists killed several of the yellow party leaders
Have they forgotten the mayhem?&#8221; he asked
He also took a swipe at left-wing intellectuals seeking the initiation of a dialogue with the Maoists
the security forces seem to have made no headway in locating the ultras in the Karreguttalu area in Chhattisgarh
The forces are reportedly trying to negotiate the terrain
which is proving to be very tough for them
They were hunting for about 1,000 Maoists who were given to understand that were holed up in the hilly terrain
The security forces had hoisted the National Flag on two hillocks
declared that they had gone through them inch by inch and are searching the other hillocks in the area
a group of left-wing intellectuals and activists in Hyderabad
including retired professor Dr G Haragopal and former judge Justice Chandra Kumar
made a representation to the Telangana Chief Minister urging him to persuade the Union government to suspend Operation Kagar in Chhattisgarh
and initiate peace talks with the CPI (Maoists)
explained to Revanth Reddy the social perspective of the Naxal issue
advocating for dialogue to end violence and save lives
Revanth Reddy met former home minister K Jana Reddy
who headed the government in peace talks with the Maoists in 2004
Revanth Reddy told reporters that since it was a national issue
he would take it up with the party&#8217;s high command
They sought her intervention for the suspension of Operation Kagar
As she is a tribal and has an ultra-left background
she shared their concern that the operation Kagar should end
an impression began gaining ground that the Centre might respect the public opinion and act accordingly
Sanjay Kumar&#8217;s assertion that the Union government would not hold talks with the Maoists if they continue to hold arms has brought the issue back to square one since the Maoists consider the firearm in their hands as their identity
Even during the 2004 talks with the then Andhra Pradesh state government led by YS Rajasekhar Reddy
the government insisted that the Maoists eschew violence
the Maoists maintained that they could not forsake arms
The talks eventually broke down over this issue
gained momentum later and led to the distribution of land to the landless poor in the state
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with front serrations and a threaded barrel
As I visited the IWA exhibition in Germany
I got very tempted to upgrade to the new Glock 45 MOS Hunter Edition
My excuse for the less-than-optimal image quality
that this is the reality as one tries to fight for a quick look “alone” among hundreds of others
The pistol pairs the full-size frame of the G17 with the compact slide of the G19
and its MOS configuration makes mounting optics simple
It also features a threaded barrel and an extended magazine floor plate
The only thing I’d prefer over this is the Aimpoint COA version
It’s hard to show the green color of the Hunter edition in the lighting available
Here’s a direct link to the model: <a href="https://eu.glock.com/en/products/pistols/g45-mos-hunter-edition" rel="nofollow noopener" target="_blank">https://eu.glock.com/en/products/pistols/g45-mos-hunter-edition</a> 
Is this also your favourite version among all the Glock models
Competitive practical shooter and hunter with a European focus
Always ready to increase my collection of modern semi-automatics
More by <a href="blog/author/erik-b/" class="link bold black underlined">Eric B</a>
  COMPACT OPTIC ADAPTER which uses Aimpoints new A-Cut system for optic attachment and it is FAR better than any optic attachment system I've used to date
the entire Gen 5 G45/COA is the best Glock I've used by a significant margin
it feel significantly outside of what Glock normally puts out
 I bought mine about three weeks ago and like it more every day
Yasiin Bey—the artist formerly known as Mos Def—has announced his retirement, reports <a href="http://www.billboard.com/articles/news/6845661/kanye-west-yasiin-bey-mos-def-rap-south-africa-arrest-retirement" target="_blank">Billboard</a>
“I’m retiring from the music recording industry as it is currently assembled today
effective immediately,” Bey said in an audio message posted on Kanye West’s officially website
<a href="https://www.essence.com/2015/11/30/kobe-bryant-announces-retirement-my-body-knows-its-time-say-goodbye" target="_blank">Kobe Bryant Announces Retirement: &#8216;My Body Knows It&#8217;s Time to Say Goodbye&#8217;</a>
Bey has spent the last week in the headlines after he was detained in South Africa for allegedly trying to leave the country using an illegal “world passport.” He used his audio message to rap his international struggles
a freestyle he referred to as “No More Parties in SA,” a nod to West’s recently released “No More Parties in L.A.”
And that’s for everything I love or hold dear
Bey says he is &#8220;being prevented from leaving unjustly
&#8220;Anyone can do the research about the world passport; it&#8217;s not a fictitious document,&#8221; he adds
&#8220;I have reason to believe or suspect that there are political motivations behind the way I&#8217;m being treated.&#8221;
Bey&#8217;s final album will reportedly be released later this year
<a href="/articles/s41598-025-96539-w/metrics" data-track="click" data-track-action="view metrics" data-track-label="link" rel="nofollow">Metrics details</a>
The article presents a synthesis method to design electrical circuit elements with fractional-order impedance
referred to as a Fractional-Order Element (FOE) or Fractor
that can be implemented by Metal–Oxide–Semiconductor (MOS) transistors
This provides an approach to realize this class of device using current integrated circuit manufacturing technologies
For this synthesis MOS transistors are treated as uniform distributed resistive-capacitive layer structures
The synthesis approach adopts a genetic algorithm to generate the MOS structures interconnections and dimensions to realize an FOE with user-defined constant input admittance phase
A graphical user interface for the synthesis process is presented to support its wider adoption
We synthetized and present FOEs with admittance phase from 5 to 85 degrees
The design approach is validated using Cadence post-layout simulations of an FOE design with admittance phase of 74  ± 1 degrees realized using native n-channel MOS devices in TSMC 65 nm technology
the post-layout simulations demonstrate magnitude and phase errors less than 0.5% and 0.1 degrees
compared to the synthesis expected values in the frequency band from 1 kHz to 10 MHz
This supports that the design approach is appropriate for the future fabrication and validation of FOEs using this process technology
Fractional-Order Elements (FOE) also referred to as Fractors or Constant Phase Elements (CPE) are two-terminal passive electronic devices whose impedance (Z) is given by Z = 1/Y = 1/(sαF)
the variable s = jω represents the complex frequency
ω is the angular frequency and the constant F is the fractance
The real number α is the order of the element and is typically in the range from − 1 to + 1
It is apparent that FOEs represent a generalization of the classical circuit elements (e.g
Each of the traditional elements are special cases of the FOE when α = 0 (resistor)
Since this article focuses on the capacitive FOE variant (0 &lt; α &lt; 1)
the admittance Y = sαF will be used for its description rather than impedance
both order α and admittance phase angle are positive numbers which is more convenient
The FOE is also referred to as CPE since its admittance phase is constant
and is determined by απ/2 in radians or 90α in degrees
These circuits offer electronic adjustability resulting from the controlled active elements and are suitable for integrated implementation
These emulation techniques are still limited in their operational (and tunable) frequency band and have higher circuit complexity that increases with increasing approximation accuracy
This device operates as a single long transmission line in the form R-C-0 (resistive-capacitive-perfectly conductive)
which demonstrates characteristics of an FOE with α = 0.5 in the frequency range from approximately 70 kHz to 20 MHz
The resistive layer is formed by an unsalicided polysilicon gate
which has a relatively low sheet resistance (approximately 240 Ω)
the structure needs to be very long and narrow to provide sufficiently high resistance to be usable at low frequencies
to achieve a sufficient length and due to the limitations of the dimensions
the MOS device must be divided into multiple fingers
shorter segments that are connected in series and placed side by side
between which parasitic capacitances and resistances may appear
An adverse effect of these parasitics are deviations of the FOE characteristics from their ideal values at high frequencies
an alternative R-C-0 layer arrangement was demonstrated for creating a MOS-based FOE with α = 0.5
the resistive layer is represented by a conductive channel between source and drain
The layer’s length thus can be significantly reduced without the need for fingers or with a much smaller number of them
the MOS transistor is not considered as only an R-C-0 structure
Resistive-capacitive properties of all parts of the MOS transistor are considered and modeled during the FOE synthesis
One resistive layer is formed by the gate electrode contacted at its ends close to the source and drain electrodes
The second resistive layer is realized by the channel between the source and drain
A total of three distributed capacitive layers are considered
other lumped parasitic resistances and capacitances present in the structure of the MOS transistor are included in the design
A native n-channel MOS transistor (having nearly zero threshold voltage) in TSMC 65 nm technology is chosen for this design due to the existence of the channel without significant gate bias voltage
The MOS-based FOE described in this article can be used in fractional-order variants of MOS-only and MOSFET-C electronic circuits as a fractional capacitor
the proposed FOE solution in this work outperforms existing designs in terms of range of realizable admittance phase (i.e
This section describes the synthesis method to design a FOE composed of individual MOS structures
This method uses a MOS transistor model with distributed parameters and its admittance matrix description to calculate the input admittance of the proposed FOE using a modified nodal analysis method
The generation of the FOE topology and physical parameters of the individual MOS structures is realized using a genetic algorithm
This metaheuristic approach was chosen due to the large search space (resulting from the total number of parameters and their wide range/type of values) for the FOE design
some parameters express the connection scheme of particular MOS transistors forming the FOE and others are continuous values representing physical parameters such as dimensions of the transistors
To calculate the input admittance of the FOE during its synthesis, a model of the MOS transistor with distributed parameters and its admittance matrix are required. A model of the MOS transistor operating in triode region from the point of view of the layered RC structure with distributed parameters is shown in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig1">1</a>.
</a>MOS transistor as a layered RC structure with distributed parameters
It is assumed that the source (S) and drain (D) are symmetric for these parasitics
These are the source and drain resistances Rsd
the gate to source/drain overlap capacitances Cgsd and the source/drain to bulk depletion capacitances Csdb
The bulk is treated as a perfect conductor in the model
While a perfect conductor is not possible for a physical design
it is very closely approximated by contacting the bulk to metal shunting on all sides of the transistor
The structure from Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig1">1</a> is redrawn to the form in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig2">2</a> containing a uniform distributed RC network with parameters Rg, Rc, Cgc, Ccb, Cgb expressing the total resistances and capacitances of the layers, and the corresponding parasitic elements.
</a>MOS transistor as a uniform distributed RC network with parasitics
the admittance matrix for this structure is given by
In the above Eqs. (<a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41598-025-96539-w#Equ13">3a</a>–<a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41598-025-96539-w#Equ19">3g</a>)
the resistances with a zero at the end of their subscript (e.g
Rg0 etc.) are sheet resistances of the respective layer
Rg0 is the sheet resistance of the gate with units of ohms
capacitances with a zero at the end of the subscript (e.g
Cgc0 is the capacitance between the gate and channel in farads per square meter
The quantity L is the physical length of the structure in meters
and W is the physical width of the structure in meters
The lumped parasitic elements attached to the ends of the distributed structure in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig2">2</a> modify the admittance matrix (<a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41598-025-96539-w#Equ1">1</a>)
Denoting the new admittance matrix elements with a prime yields
The quantities Cgsd0 and Csdb0 are the values per unity width of the gate to source/drain overlap capacitance and the source/drain to bulk depletion capacitance
and Y′00 are given by the negative sum of the off-diagonal elements in their respective rows as before
The addition of parasitic resistances Rsd causes the number of model nodes to increase from five to seven. The new admittance matrix \({\mathbf{Y^{\prime}}}\) expands to 7 × 7 as follows and its last two rows and columns pertain to the added nodes 5 and 6, shown in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig2">2</a>
The elements of the reduced admittance matrix \({\mathbf{Y^{\prime\prime}}}\) achieved eliminating the node e are computed using the formula
Nodes without a connection are coded with zero, see Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig4">4</a>b
A total of eight different connections are allowed and thus the design algorithm selects one of the eight variants of the matrix Ek for each boundary between two MOS structures
Figure <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig4">4</a> does not show the nodes B (bulk)
which are always interconnected and connected to the ground node gnd in the synthesis algorithm
This is done because implementation on one chip with one grounded substrate is assumed
the design algorithm also allows the bulk nodes to be left ungrounded (i.e
interconnected and floating) or to be disconnected from each other
</a>Example of grounding adjacent MOS structures and its coding by matrix Ak
The matrix B encodes the connection of external nodes of the entire group of interconnected structures
At least one of these nodes must be connected to the FOE input labeled in
At least one other node is selected as a ground node gnd
The resulting input admittance of the FOE is then present between the nodes in and gnd
If the other two external nodes remain unconnected to either in or gnd
these nodes can also be interconnected in a separated node (con) or remain unconnected (floating—flo)
An example of coding the connection of external nodes of a series of MOS structures using matrix B is shown in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig6">6</a>.
</a>Example of coding external connections by matrix B
The physical parameters of individual MOS structures connected according to the connection factors in CCh chromosome are encoded in the PCh chromosome (Parameter Chromosome)
The admittance matrices of the n MOS structures are stored in MATLAB in a 4-dimensional array, where the indices in dimensions 1 and 2 correspond to the five terminals of the MOS structure in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig2">2</a>
The index in dimension 3 is the structure number (from 1 to n) and in dimension 4 are the individual frequencies (here 100 frequency points)
This method is described below for specific application to the distributed FOE structure
MNA is used to construct a matrix equation of the form
each node in a circuit with p nodes is designated by a number corresponding to its row/column in the matrices
and the remaining nodes correspond to 1 through p
For a circuit with p nodes and q voltage sources
the M matrix will be (p + q) × (p + q) and consist of four smaller submatrices YG
The global admittance matrix YG is p × p and is determined by the admittance between nodes
Each element in the diagonal of YG is the sum of all admittances connected to that node
Each off-diagonal element of YG is the negative of the admittance connecting the pair of corresponding nodes
The admittances between nodes for the YG matrix can be found using the admittance matrices of the particular MOS structures
An entry is a 1 if its corresponding node is connected to the positive terminal of a voltage source
− 1 if its corresponding node is connected to the negative terminal of a voltage source
the input is the only voltage source used for testing the input admittance by sensing current flowing through this source
The input node in is always numbered as 1 so the first element of F is a 1 and the rest 0
The G matrix is the transpose of the F matrix
The x matrix in (<a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41598-025-96539-w#Equ26">9</a>) is (p + q) × 1
Each of its first p elements contains the unknown voltage at the corresponding node in the circuit
and each of the last q elements contains the unknown current into the corresponding voltage source
The z matrix is (p + q) × 1 and holds the independent current and voltage sources
Each of the first p elements contains the sum of independent current sources into the corresponding node
and each of the last q elements contains the value of the corresponding voltage source
there are no independent current sources so the first p elements are zero
the final entry in z matrix contains a 1 corresponding to an AC signal of the voltage source with 1 V amplitude
The circuit is solved by the matrix manipulation
The last element of the x matrix contains the current flowing into the input voltage source
The current into the FOE structure is the negative of this value
and the input admittance (in siemens) is equal to the input current in amperes because the input voltage amplitude is 1 V
Solving for the FOE input admittance can be summarized by the following steps. (The external nodes 1, 2, 0, 5, 6 of the MOS structure in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig2">2</a> will be referred to as the terminals in this summary to avoid confusion with the nodes of the FOE solution in terms of the described MNA.)
can be identified using the Ak matrices and the second row of the B matrix in CCh
can be identified using the first row of the B matrix in CCh
The remaining nodes can be identified using the remaining rows of the B matrix and the Ek matrices in CCh
Compute the admittance matrices of the n MOS structures as described in section “<a data-track="click" data-track-label="link" data-track-action="section anchor" href="/articles/s41598-025-96539-w#Sec5">MOS transistor model with distributed parameters and its admittance matrix</a>” at frequency points of interest
Construct the YG global admittance matrix using the identified nodes
For each terminal that is a part of a given node
use the admittance matrix of a MOS structure to determine the admittance to all terminals that are a part of different nodes
Calculate the input admittance Yin between the nodes in and gnd at each frequency point using (<a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41598-025-96539-w#Equ29">12</a>)
</a>Window of the admittance phase response for fitness score calculation
This window is given by the required frequency range of fmin to fmax and the admittance phase range from φmin to φmax. The FOE admittance phase values are calculated in a defined number of frequency points between fmin and fmax. The fitness score is proportional to the number of the phase response points, which are located between φmin and φmax. In the example in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig7">7</a>
the value of the fitness score is Fit = 11 out of its maximum possible value 18
The mathematical representation of the GA for this synthesis is given by
The selection operator Θ selects parent individuals from P
The operator Ω includes the crossover operator Ωc and the mutation operator Ωm that produce offspring from parent solutions
The reproduction operator Ψ removes two randomly selected individuals from the worst half of the population P and replaces them with the newly generated offspring
Termination check τ is used to determine whether the desired quality of the solution was met
this approach has drawbacks: (1) it is slow because two complex algorithms are executed in each iteration and (2) since the optimization of parametric and connection factors is not performed in one iteration
the algorithm likely attempts to optimize parametric factors based on connection factors that are not optimal (having been optimized based on less favourable parametric factors)
The newly designed approach for implementing the GA for synthesis is depicted in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig8">8</a>.
the initial population P is constructed by generating individuals described by the factors PCh and CCh
the population size M ranging from 250 to 500 was used to obtain satisfactory solutions within a reasonable time frame
In the block τ the algorithm checks whether the population contains individuals of sufficient quality in terms of fitness score
If a solution is good enough the algorithm proceeds to the final optimization stage
it verifies whether the specified number of runs (“hops”) of GA y has been reached
the algorithm proceeds to the final optimization; if not
it continues with an additional run of a predefined set of x GA iterations
The values x = 1000 and y = 15 were used in this work
where the connection and parametric factors were optimized separately
The crossover operator Ωc exchanges information between parent individuals to produce offspring that potentially have better combinations of connection and parametric factors
The mutation operator Ωm introduces small random changes to both connection and parametric factors
helping to explore the search space more thoroughly and avoid local optima
The reproduction operator Ψ is applied after the fitness evaluation
Newly generated offspring replace individuals in the population
typically those with the lower fitness values
ensuring that the population evolves over time
In this work the new offspring replace two randomly selected individuals from the lower half of the population
The algorithm checks whether the fitness of the population has reached the desired quality threshold τ
final optimization attempts in terms of parametric factors are performed to further refine the best individuals
The MATLAB function fmincon which optimizes constrained nonlinear multivariable function is used for this purpose
The computation time required for fmincon is too great to implement at every GA iteration
so instead it is only used on the final solution to ensure the parametric factors are locally optimal
the algorithm concludes by identifying the optimal parametric (PCh) and connection (CCh) factors
which define the best FOE synthesized through this GA
</a>Input (a) and output (b) GUI windows of the synthesis software (some values have been deleted as restrictions apply to the availability of these technology parameters)
the number of frequency points between fmin and fmax
The output interface (Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig9">9</a>b) presents the fitness score out of the total number of frequency points
and recapitulates the Material Parameters entered in the input interface
At the top right are Additional Parameters describing other properties of the solution
the frequency when the phase response of the designed FOE first enters the desired window (FreqIn)
when it exits it for the last time (FreqOut)
and the number of decades between these frequencies (Freq In Phase)
such as the ratio of gate and channel resistances N (which is given by the technology)
the designed lengths L of individual MOS structures and a graphic representation of the FOE topology based on the connection factors in CCh
The upper resistors represent the gates of the transistors contacted at two ends (G1 and G2)
the lower resistors represent the channels of the transistors between their source (S) and drain (D) electrodes
The bulk electrodes (B) are not shown as they are always connected to ground (gnd) due to the manufacturing technology (as previously mentioned)
Nodes marked with the same color are interconnected
The FOE input is between the nodes marked I (in) and the black dot (gnd)
Floating nodes are represented by a black square with a white fill
At the bottom of the GUI are the resulting magnitude and phase admittance responses (blue) and the required phase window (red)
It should be noted here that this version of the program considers additional parameters
The resistance Resd = 225 Ω represents an on-chip Electro-Static Discharge (ESD) protection and occurs in series with the designed FOE with one terminal connected to the input pad of the chip and the other to the FOE in node
The capacitance Cpck = 1 pF represents the parasitic capacitance of the input terminal to ground caused by the package lead and printed circuit board (PCB) pad
This capacitance is connected in parallel to the series combination of FOE and Resd
The values of Resd and Cpck must be considered if the on-chip fabricated and packaged FOE is to be measured on PCB by an impedance analyzer
If the FOE admittance could be measured directly on chip without bringing its contacts out of the package
the resistance Resd and the capacitance Cpck can be set to zero in the synthesis
To evaluate the performance of the FOE synthesis process
a series of test cases for different fractional orders was performed
For all test cases a constant width of W = 50 μm for MOS structures was assumed
The width only affects the FOE impedance magnitude without influencing the phase
While running the synthesis program with the parameters of the selected TSMC 65 nm technology
a width of 50 μm was found to lead to impedance magnitudes in the order of 1 MΩ at the beginning of the frequency band to 1 kΩ at the end of the band
a tenfold larger impedance magnitude is required
this can be achieved by reducing the width by a factor of ten
The input parameters for the synthesis process were: admittance phase tolerance of ± 1 degree
and evaluation using 100 frequency points in the frequency band
the fitness score determines what percentage of the 100 frequency points across this five-decade frequency band are within the window between minimum (φmin) and maximum (φmax) phase
a fitness score of 70 can be interpreted as the phase response meeting requirements over approximately 3.5 decades
The allowed range of lengths L during synthesis was 100 μm to 900 μm
The minimum is given by the aspect ratio of the structure (L/W) being at least two for which the structure can be considered as distributed
The maximum length is determined by the TSMC 65 nm technology rules
The presented synthesis results assume n = 4 and 5 MOS structures
poor fitness values were observed and n &gt; 5 did not yield significant fitness improvements
It shows that the required time increases with n
while the average time per run decreases for higher number of runs thanks to the parallelization and other global effects
</a>The best fitness values of the synthesized FOEs depending on phase and number of structures n forming the FOE
</a>Approximate chip areas of synthesized FOEs having the best fitness values for each phase and both n values
</a>Minimum working frequency (FreqIn) of the synthesized FOEs having the best fitness value for each phase and n
The operational frequencies of the FOE are determined by technology parameters and permitted lengths of individual transistors (as mentioned previously)
operation at lower frequencies is required
longer MOS structures than the TSMC 65 nm technology limit of 900 μm should be allowed in the synthesis
if higher working frequencies are required it is necessary to allow lower minimum lengths (L) than the current 100 μm limit
it is expected that phase coverage across higher frequencies is possible and that resulting structures will have smaller physical dimensions
The focus on designing FOEs operating at low frequencies by allowing largest possible lengths during the synthesis was a specific choice of this work
The intent of this choice supports the future measurement of fabricated devices by an impedance analyzer at the external pins of the integrated circuit without introducing significant parasitic effects associated with higher frequencies
</a>Magnitude (a) and phase (b) admittance frequency responses of FOE from Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig9">9</a>b with 74 ± 1 degrees and of Valsa FOE emulator for comparison
the magnitude relative error is less than 0.5% and the phase absolute error is below 0.1 degrees in the presented frequency range
the operating band is 2.38 decades using the alternative FOE compared to 3.85 decades achieved by the MOS-based FOE
The MOS-based FOE presented here has a 1.62-fold larger frequency range
</a>Layout of designed MOS-based FOE from Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig9">9</a>b with 74 ± 1 degrees admittance phase; visible layers: poly
A zoomed-in section of the FOE layout can be seen in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig15">15</a>. The metal wires are sufficiently wide to ensure low resistance. A wide p + ring is placed around each transistor to maintain a uniform substrate potential across the entire device. The top and bottom corners of the poly gate are connected through an m1 vertical path.
</a>Zoomed-in section of the FOE layout from Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96539-w#Fig14">14</a>—bottom left corner of transistor M1; visible layers: poly
This work has presented the design and implementation of a FOE employing MOS transistors
considered as distributed resistive-capacitive structures
A MATLAB based computer program was used for the FOE synthesis
generating interconnections and parameters of partial MOS structures to achieve a target admittance phase response in a wide frequency range
The program is based on a genetic algorithm
admittance matrix description of MOS structures and modified nodal analysis method
The algorithm benefits from a synchronized approach where both connection and parametric factors of the solutions are optimized in one run
addressing inefficiencies in previous implementations and improving execution speed
The proposed technique can be used for FOE design with order α in the range of 0–1
a frequency range of 3–4 decades was achieved for phases above 45 degrees
For lower phase values 1.5–2.5 decades of operational frequency were achieved; supporting that this method can be used across a wide range of orders and target frequency bands
Another important novelty of this work is the compatibility of the synthesized elements with contemporary integrated circuit fabrication technologies and the use of algorithmic design derived from electrical circuit theory
Many other solutions rely only on experimentation with differently composed and arranged chemical materials which results in a low range of the realizable phase and/or narrow frequency band
The validity of the synthesis has been validated using PEX post-layout circuit simulations of the test samples in Cadence
The admittance phase characteristics correspond with sufficient accuracy to the requirements specified during the synthesis and prove the functionality of the proposed design tool
Current efforts are preparing the layout of selected FOEs using native n-channel MOS devices in TSMC 65 nm technology with plans for their on-chip fabrication within the mini@sic service of the Europractice consortium
Future work to characterize the fabricated samples aims to further verify the theoretical assumptions in this work and demonstrate single-device FOEs
The datasets and code described in this study are available from the corresponding author on reasonable request
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This material is based upon work supported by the Czech Science Foundation under Project No
GA23-06070S and by the National Science Foundation under Grant No
or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the Czech Science Foundation or the National Science Foundation
Faculty of Electrical Engineering and Communication
Department of Electrical and Computer Engineering
Kalashnikov Izhevsk State Technical University
wrote and collected the main manuscript text and worked on the synthesis program; A.S
authored the MOS layout and conducted the Cadence simulations; P.S
prepared the genetic algorithm and its description; J.D
tested the synthesis program and prepared the results section; J.J
coordinated the author team and administration; C.C
worked on the circuit analysis and synthesis methods and computer program and wrote the respective article sections; T.F
reviewed the methodology for designing the elements and participated in writing and reviewing the text; P.U
is the original author of the described method of fractional element design and consulted on the correctness of the procedures and computation methods
All authors have read and agreed to the published version of the manuscript
The authors declare no competing interests
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations
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In 2018, <a href="https://us.glock.com/en">Glock</a> introduced its first crossover pistol, the <a href="/content/tested-glock-19x-pistol/">G19X</a> chambered for 9 mm Luger
This model came unconventionally mixed-matched with existing features found in other Glock pistols
By pairing a G19 Compact-size slide assembly with the Standard-size frame of a G17
the resultant pistol came a bit handier and lighter than the company's G17 while also preserving a duty-size pistol's ammunition capacity
Once the coyote-tan 19X was out of the gate
there were Glock fans who hoped the company would keep expanding the crossover lineup
which is essentially a black 19X with front slide serrations
but there were those who wanted the opposite of the 19X treatment
The logic was that such a gun would provide a duty-size pistol's worth of sight radius and ammunition performance with a more concealed-carry friendly grip frame
Those who hoped for the colloquially named "G19L" (the L is for Long) would have to wait for it to arrive on dealers’ shelves until November 2023. Dubbed the G49 Gen5 MOS, this long-anticipated model is the result of <a href="https://taloinc.com/">TALO Distributors</a> teaming up with Glock to offer it as an exclusive Glock-pattern pistol
Its G17-type slide assembly makes this pistol 0.67" longer than the typical G19 while keeping the 4.9" height
This leaves room in the grip for the G19's 15-round double-stack magazines
it's not quite as easy to come by as the regular-run models
But I was able to wrangle one for this evaluation
the Gen5 models are described by the company as offering more than 20 modifications when compared to previous generations
When it comes to die-hard fans of a given platform
whether or not next generation changes qualify as improvements will be hotly debated
But as a Glock shooter who "grew up" with the Gen3 guns
to genuinely complain about in regards to the Gen5 feature set
short-recoil-operated semi-automatic pistol chambered for 9 mm Luger
two interchangeable backstraps and three 15-round metal-lined polymer magazines
The bright orange Gen5 followers are much easier to spot through the witness holes
one RMR-compatible 02 MOS optics mounting plate
The remaining accessories include a magazine loader
The steel slide features a matte black diamond-like carbon treatment (nDLC) with front and rear cocking serrations
the dimensions of the MOS cutout will accommodate a variety of optics while leaving the rear sight in place
The sighting system is of the typical Glock variety
consisting of a white-dot post front sight aligned with a dovetailed
Other slide features include a rounded nose for easier reholstering
a polymer slide plate installed at the back and a duplicate of the frame's serial number laser engraved just below the beveled ejection port
The right-side extractor also serves as a visible and tactile loaded-chamber indicator
The interior of the slide features a wedge-shaped firing pin safety plunger in place of the rounded button-like plunger used for many years. <a rel="noopener" href="https://us.glock.com/en" target="_blank">According to Glock</a>
this change in plunger shape is intended to contribute to long-term durability
a smoother trigger pull and an improved trigger reset
the formerly wedge-like tip of the striker has been rounded like a more typical firing pin
The 4.49" long Glock Marksman barrel features a competition-style recessed crown to help protect the rifling at the muzzle
These barrels have been tightened up in and around their chambers and rifling for improved accuracy
The barrel is supported by a dual recoil-spring assembly reminiscent of the Gen4 version but about a quarter of an inch longer
The G49's frame is of the two-pin variety in which the locking-block pin has been omitted
A look inside with the slide assembly removed reveals the slide lock is supported by a coil spring and four-piece trigger return spring assembly
Modifications made to the Gen5 frames in order to accommodate the roughly V-shaped
one-piece ambidextrous slide stop lever are also visible
The dustcover is molded to serve as a single-slot
The forward surface of the trigger guard is curved and textured to serve as a finger rest with a beveled
undercut connection where it meets the grip
The external controls include a takedown slider
a curved polymer trigger with an integral blade safety
a reversible rectangular magazine release button and the aforementioned ambidextrous slide stop
The Gen5 grip configuration blends features of previous generations with a few new changes to provide the best hand-to-pistol fit yet
all four sides feature the effective rough textured frame surface and the backstrap is grooved to accept the medium and large interchangeable backstrap inserts provided with the pistol
The magazine well is flared with a beveled inner edge to aid in smoother reloads
The magazine baseplates are slightly larger so that they can still be gripped and manually stripped out of the magazine well
the G49 exhibited that often-elusive "it" factor
Due to the differences in individuals' personal preferences
I can't say that everyone will have the exact same experience I did
the features of this pistol harmonized to provide a just-right fit
The pistol was utterly reliable with all ammunition tested while exhibiting the moderate and controllable levels of felt recoil that contribute to the 9 mm cartridge's popularity. Test magazines included the three provided with the pistol along with a mix of older 17-round Glock factory and <a href="https://magpul.com/">Magpul</a> PMAG magazines
But it was the grip shape and the pistol's balance that caught my attention
I didn't have to focus on forming a shooting grip since my hands just fit in where they were supposed to go
This contributed to the gun pointing naturally and shooting comfortably
As I've worked with various semi-automatic pistols over the years
I've developed a taste for the long-slide configurations
I'm glad to say that Glock hasn't been shy about providing enthusiasts
Model options have included the 9 mm G19L and the competition-style G34
along with the G40 chambered in 10 mm Auto for handgun hunting
as much as I like long slides for their good looks and down-range performance
the added weight and larger than standard slide lengths do not lend themselves well to comfortable concealed carry
In this case we are talking about a standard-size slide with a compact grip frame
This combination is a just-right size for comfortable carry while squeezing a bit more performance out of the ammunition fired
does not make all that much of a difference
But for those of us who do care about these things
TALO Exclusive Glock G49 MOS Specifications:Manufacturer: Glock Inc.Action Type: recoil-operated
centerfire pistolChambering: 9 mmBarrel: 4.49" Glock Marksman; six-groove
1:9.84" RH-twist riflingFrame: matte-black polymerMagazine: 15-round detachable boxSights: polymer white dot front
white outline square-notch rearTrigger: striker-fired; 5-lb.
pullOverall Length: 7.95"Height: 4.49"Width: 1.30"Weight: 23.4 ozs
(with 15-round magazine)Accessories: Foam lined carry case
Long respected for its world-leading military small arms
through its American factory and engineers
shooters—and the new Concealed Carry 9 mm Luger micro pistol is poised to quicken it
Read today's "The Armed Citizen" entry for real stories of law-abiding citizens
Despite a slight decline in demand for new firearms
the industry’s economic impact rose from $90.5 billion in 2023 to $91.7 billion in 2024
Kahr Arms has been most well-known for its single-stack line of concealed-carry pistols
the company is moving into the double-stack market with its new Premium X Series
Henry's Special Products Division has officially released its first line of unique offerings in its HUSH series of suppressor-ready lever-action rifles
Built primarily from thick 6061 aircraft-grade aluminum
is an incredibly robust and stable gun rest designed for use with pistols and long guns alike
MOSFET provider Force Mos Technology has secured a legal victory in a patent infringement lawsuit against Asus
with the US District Court for the Eastern District of Texas ruling in its favor on February 13
The court found Asus guilty of willful infringement and ordered the company to pay US$10.5 million in damages
Force Mos Technology announced plans to seek an injunction to block the sale of infringing MOSFET products in the US market
The company also stated that it would continue collecting evidence to safeguard its intellectual property and business interests
The dispute dates back to 2022 when Force Mos Technology identified that Asus was selling notebooks in the US that allegedly incorporated MOSFET components infringing on its patents
Despite repeated attempts to resolve the issue through legal notices and communications
prompting Force Mos Technology to file a lawsuit in the Eastern District of Texas
the infringing MOSFETs are widely used in consumer electronics
with each device potentially incorporating dozens to over a hundred such components
has resulted in significant financial losses
The court's ruling includes the possibility of enhanced damages due to the jury's finding of willful infringement
Asus may be required to cover some or all of Force Mos Technology's legal expenses
Force Mos Technology reaffirmed its commitment to protecting its intellectual property and ensuring compliance with patent laws
It intends to take further legal steps to prevent the sale of electronic products containing the disputed MOSFETs in the US market
Asus has argued that the technology in question was sourced from a third-party supplier
the supplier should bear the responsibility for any infringement
The company has stated its intention to appeal the ruling
The original complaint was filed on November 28
and Force MOS followed up with a First Amended Complaint on March 7
after discovering that certain laptop models sold by Asus in the US incorporated disputed components
Inergy Technology filed two Inter Partes Review (IPR) petitions challenging two of the asserted patents
Although Asus requested a stay of the proceedings pending the outcome of these IPRs
noting that even a favorable IPR decision would not resolve all significant issues in the case
The Mosaic Company (NYSE:MOS) announced it is hosting its 2025 Analyst Day on March 18
The company has made presentation materials available on their investor relations website
The event's live webcast will commence at 9:30 am ET
The Mosaic Company (NYSE:MOS) ha annunciato che ospiterà il suo Analyst Day 2025 il 18 marzo 2025 a Tampa
L'azienda ha reso disponibili i materiali di presentazione sul proprio sito web per le relazioni con gli investitori
Il webcast in diretta dell'evento inizierà alle 9:30 ET
The Mosaic Company (NYSE:MOS) anunció que llevará a cabo su Día del Analista 2025 el 18 de marzo de 2025 en Tampa
La compañía ha puesto a disposición los materiales de presentación en su sitio web de relaciones con inversores
La transmisión en vivo del evento comenzará a las 9:30 am ET
The Mosaic Company (NYSE:MOS)는 2025년 3월 18일 플로리다주 탬파에서 2025년 애널리스트 데이를 개최한다고 발표했습니다
The Mosaic Company (NYSE:MOS) a annoncé qu'elle organisera sa journée des analystes 2025 le 18 mars 2025 à Tampa
L'entreprise a mis à disposition des documents de présentation sur son site Web des relations avec les investisseurs
La diffusion en direct de l'événement commencera à 9h30 ET
Das Unternehmen hat Präsentationsmaterialien auf seiner Website für Investorenbeziehungen bereitgestellt
Der Live-Stream der Veranstaltung beginnt um 9:30 Uhr ET
TAMPA, FL / <a rel="nofollow noopener" href='https://www.accessnewswire.com/'>ACCESS Newswire</a> / March 18
2025 / The Mosaic Company (NYSE:MOS) is hosting its 2025 Analyst Day today
Presentation materials were released on the investor relation website
Presentations will begin at 9:30 am ET and the live webcast will be accessible at <a rel="nofollow noopener" rel="nofollow" href="https://pr.report/8e0e">Mosaic - Events &amp; Presentations</a>
About The Mosaic CompanyThe Mosaic Company is one of the world's leading producers and marketers of concentrated phosphate and potash crop nutrients. Mosaic is a single source provider of phosphates and potash fertilizers and feed ingredients for the global agriculture industry. More information on the company is available at <a rel="nofollow noopener" rel="nofollow" href="https://pr.report/8e0f">www.mosaicco.com</a>
Jason Tremblay, 813-775-4226<a rel="nofollow noopener" rel="nofollow" href="mailto:jason.tremblay@mosaicco.com">jason.tremblay@mosaicco.com</a>
Joan Tong, 863-640-0826<a rel="nofollow noopener" rel="nofollow" href="mailto:joan.tong@mosaicco.com">joan.tong@mosaicco.com</a>
Ben Pratt, 813-775-4206<a rel="nofollow noopener" rel="nofollow" href="mailto:benjamin.pratt@mosaicco.com">benjamin.pratt@mosaicco.com</a>
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Molybdenum disulfide (MoS2) has advantageous traits and characteristics that make it suitable for a diverse array of practical applications
Enhancing the surface area of the adsorbent leads to a proportional increase in its performance
the synthesized two-electrode electrodeposited MoS2 (ED-MoS2) thin films were microstructurally characterized to investigate its surface modulation for suitable enhancement in its applicative properties
The characterization shows that the surface properties of the deposited film can easily be modulated to favor its needs and can be done by simply varying its electrodeposition parameters
such as growth period and voltage supplied
persistent n-type conductivity of intrinsic MoS2 makes it challenging to achieve p-type conductivity
the challenge of obtaining p-type MoS2 thin films was solved
The photoelectrochemical cell measurements revealed that lower cathodic potentials (1.15–1.35 V) favored the growth of p-type MoS2 layers while the growth of n-type MoS layers was achieved at the higher cathodic potential
There was no further purification performed on any of the reagents
Cathodic electrodeposition of the film samples was carried out using a two-electrode electrochemical cell on glass/fluorine-doped tin oxide (glass/FTO) with sheet resistances of 7 Ω that were bought from Lumtec Incorporation
The two electrodes encompass graphite plate and FTO/glass as counter and working electrodes
the FTO/glass was ultrasonically cleaned successively in a bath solution containing soapy water
The experiment was carried out in an electrolyte with an adjusted pH of 5
Five distinct MoS2 film samples were prepared at various deposition voltages ranging from 1.15 to 1.55 V after a uniform duration of 10 min
Another set of MoS2 film samples were obtained under this same electrolytic condition but was grown at a constant potential 1.45 V for different deposition durations from 10 to 40 min
The photoelectrochemical (PEC) cell system comprises a solar module analyzer (SMA)
and an electrolytic set-up consisting of the beaker
and two electrodes which are the counter and semiconducting electrodes
PEC studies were measured on the deposited films by creating an electrolytic junction between the substrate with active film and the electrolyte under darkness and illumination
This was done to determine each semiconducting layer’s electrical conductivity type
The electrolyte/electrodeposited (ED) MoS2 junction open circuit voltage was measured to determine the electrical conduction type of ED-MoS2 layers
The glass/FTO/MoS2 was used as the semiconducting electrode while a carbon rod served as the counter electrode
The electrolyte used was an aqueous solution prepared from 0.1 M of sodium thiosulphate
Band bending occurs at the solid/liquid interface when the glass/FTO/MoS2 layer is immersed in the electrolyte
The difference between the interface’s dark and illuminated voltages indicates the PEC cell signal
A positive value indicates a p-type material while a negative value indicates an n-type material
The PEC cell system is easy to calibrate with known materials to verify results
In accordance with the information revealed from the EDX spectrum of the deposited MoS2 film, displayed in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41598-025-96930-7#Fig1">1</a>, all the characteristic elements attributable to the formation of solution-grown MoS2 thin film on the FTO substrate are revealed.
</a>EDX Spectrum of the Deposited MoS2 Monolayer Thin Films
</a>SEM micrographs of MoS2 thin films at different cathodic potentials of (a) 1.15 V (b) 1.25 (c) 1.35 V (d) 1.45 and (e) 1.55 V.
</a>SEM micrographs of MoS2 thin films at (a) 10 (b) 20 (c) 30 and (d) 40 min deposition periods
</a>AFM topographic 2D and 3D images of MoS2 thin films deposited at varying cathodic deposition potentials of (a) 1.15 V and (e) 1.55 V.
</a>AFM topographic 2D and 3D images of MoS2 thin films deposited at varying deposition periods (a) 10 min and (b) 40 min
</a>XRD pattern of the electrodeposited MoS2 thin film
The resulting data are computed and shown in Table <a data-track="click" data-track-label="link" data-track-action="table anchor" href="/articles/s41598-025-96930-7#Tab1">1</a>
the average grain size of the electrodeposited MoS2 thin film is estimated as 48.43 nm and with mean strain
</a> (a and b) Photoelectrochemical measurement as a function of deposition conditions at different deposition voltages and time
and (c and d) plots of photoelectrochemical resistances as a function of deposition voltages and time
Data will be made available on request by Yetunde A
Ajayeoba (yetunde.ajayeoba@uniosun.edu.ng)
How 2D semiconductors could extend Moore’s law
2D heterostructures for ubiquitous electronics and optoelectronics: Principles
Nanomaterials for quantum information science and engineering
Ultrathin one-and two-dimensional colloidal semiconductor nanocrystals: Pushing quantum confinement to the limit
Olusola, O. I., Madugu, M. L. &amp; Dharmadasa, I. M. Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells. Mater. Chem. Phys. 191, 145–150. <a href="https://doi.org/10.1016/j.matchemphys.2017.01.027" data-track="click_references" data-track-action="external reference" data-track-value="external reference" data-track-label="10.1016/j.matchemphys.2017.01.027">https://doi.org/10.1016/j.matchemphys.2017.01.027</a> (2017)
Vidya, C., Manjunatha, C., Pranjal, A., Faraaz, I. &amp; Prashantha, K. A multifunctional nanostructured molybdenum disulphide (MoS2): An overview on synthesis, structural features, and potential applications. Mater. Res. Innov. <a href="https://doi.org/10.1080/14328917.2022.2109887" data-track="click_references" data-track-action="external reference" data-track-value="external reference" data-track-label="10.1080/14328917.2022.2109887">https://doi.org/10.1080/14328917.2022.2109887</a> (2022)
Recent advances in doping of molybdenum disulfide: Industrial applications and future prospects
P-type doping in large-area monolayer MoS2 by chemical vapour deposition
Graphene oxide: A promising membrane material for fuel cells
Monolayer transition metal dichalcogenides as light sources
Synthesis of emerging two-dimensional (2D) materials—advances
2D layered transition metal dichalcogenides (MoS2): Synthesis
Oxygen driven defect engineering of monolayer MoS2 for tunable electronic
Rapid and large-scale quality assessment of two-dimensional MoS2 using sulfur particles with optical visualization
Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics
Interlayer excitons and band alignment in MoS2/hBN/WSe2 van der Waals heterostructures
Quantum-engineered devices based on 2D materials for next-generation information processing and storage
Many-body effects in doped WS2 monolayer quantum disks at room temperature
Photoluminescence enhancement by band alignment engineering in MoS2/FePS3 van der Waals Heterostructures
and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study
Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides
Tuning photoluminescence performance of monolayer MoS2 via H2O2 aqueous solution
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
Sulfur vacancy engineering of metal sulfide photocatalysts for solar energy conversion
Electrodeposition of CuInSe2 layers using a two-electrode system for applications in multi-layer graded bandgap solar cells
Effect of thickness: a case study of electrodeposited CdS in CdS/CdTe based photovoltaic devices
Optical and photoluminescence modulation in monolayer molybdenum sulfide thin films via electrochemical deposition: Exploring the influence of deposition voltage and time
Review on metal sulfide-based nanostructures for photodetectors: From ultraviolet to infrared regions
Infrared photodetectors based on 2D materials and nanophotonics
Physical and chemical adsorption and its applications
Oxygen atom adsorbed on the sulfur vacancy of monolayer MoS2: A promising method for the passivation of the vacancy defect
Preparation of nanocrystalline ZnO/CoxOy and CNT/CoxOy bilayers for photoabsorption potential: XPS and some surface structural characterization
Electrodeposition of nanostructured coatings and their characterization—a review
characterization and biological activity of Co-doped ZnO nanostructured thin film: A comprehensive study on its photo-physical properties and antimicrobial efficacy against food-borne pathogen
Enhanced electrocatalytic properties in MoS2/MoTe2 hybrid heterostructures for dye-sensitized solar cells
Exploring the potential of Withania somnifera-mediated Ag/Mn3O4 nanocomposites as electrode material for high-performance supercapattery device
Electrochemical performance and charge density distribution analysis of Ag/NiO nanocomposite synthesized from Withania somnifera leaf extract
Synthesis and electrochemical characterization of pseudocapacitive α-MoO3 thin film as transparent electrode material in optoelectronic and energy storage devices
Spincoated MoO3 nanostructured thinly rods: An insight into effect of annealing temperature on physical properties and antibacterial activity against urinary tract pathogens
optical and magnetic properties of spray pyrolysed CdS thin films
Review of the CdCl2 treatment used in CdS/CdTe thin film solar cell development and new evidence towards improved understanding
Characterization of molybdenum disulfide nanomaterial and its excellent sorption abilities for two heavy metals in aqueous media
Adsorption behavior of thiophene on MoS2 under a microwave electric field via DFT and MD studies
Ab initio study of adsorption behaviours of molecular adsorbates on the surface and at the edge of MoS2
Effect of reaction temperature on morphology and photoelectrochemical performance of titanium dioxide
Hole doping effect of MoS2 via electron capture of He+ ion irradiation
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The financial support of the Tertiary Trust Fund under the Academic Staff Training and Development for funding this research is gratefully acknowledged
Awodugba of the Ladoke Akintola University of Technology Ogbomosho Ogbomosho
Nigeria for his supervision and technical support on the studies
Suresh C Pillai of the Atlantic Technological University
Ireland for accessibility to ATU research facilities
Ladoke Akintola University of Technology Ogbomosho
The Federal University of Technology Akure
Centre for Mathematical Modelling and Intelligent Systems for Health and Environment (MISHE)
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DOI: https://doi.org/10.1038/s41598-025-96930-7
the artist formerly known as Mos Def is back
and his new partnership with the Alchemist
</a>It’s the penultimate night of Paris fashion week
a storied 1,000-capacity music hall beneath Montmartre
Yasiin Bey – the artist formerly known as Mos Def – is holding court
especially when you be swagging this hard,” grins the dandyish MC and sometimes streetwear designer
“People see me and be like: ‘What’s the event?’ Today
a partnership with DJ and producer the Alchemist (Eminem
Over beats steeped in psychedelia and spiritual soul
Bey skips between the personal and political with profundity
a meditation on resistance that finds Bey reflecting: “I don’t know if Goliath made David afraid / But I do know David threw his stone anyway,” to Kidjani
Sheron Smith (the “Umi” in his 1999 hit Umi Says)
The material signals a rebirth for an MC and movie star who
seemed content to disappear from the limelight
“I’m a Hollywood runaway – don’t tell ’em my whereabouts!” he grins a week later
in the snug of London’s Chiltern Firehouse hotel
Bey toiled in community theatre and off-off-off-Broadway productions
before scoring roles in TV movies and short-lived sitcoms
he was Bill Cosby’s teenage sidekick in The Cosby Mysteries
rapping against such underground stars as Supernatural
Mister Man (whose group Da Bush Babees Bey later guested with) and Agallah
Bey would “come round and buy people sandwiches”
He was doing his acting thing and coming to the park and rhyming.”
Although always on his way to or from another screen test
whenever Bey hit the park his commitment was unfailing
flowing with the energy of the times and the city,” he remembers
“I saw a real shot at having this be a career
We knew we weren’t going to be media darlings
the hottest imprint within New York’s then insurgent underground hip-hop scene
“Time is the asset / How you gonna spend it?” He certainly invested his wisely during these years
It came at the perfect moment – the nadir of the gangsta era
with the street verité of the genre’s early years now swapped for Puff Daddy’s soapy capitalist fantasies
and Bey’s socially conscious hip-hop was a welcome corrective
<a href="#img-3" data-ignore="global-link-styling" aria-hidden="true" tabIndex="-1" class="open-lightbox dcr-13fd1ms">View image in fullscreen</a>Mono culture … Yasiin Bey
Photograph: The Bey Estate“We had optimism and youthful naivety,” he says of these early days
“Talib and I were continuing great traditions laid down by our elders – Gil Scott-Heron
I felt for sure we were doing something special
We knew radio programmers didn’t wanna play our pro-Black shit while they were trying to sell skin cream
We knew we weren’t going to be media darlings.” He stops for a beat
Indeed, Black on Both Sides translated its critical acclaim into commercial success, hitting No 3 in Billboard’s US Rap Albums chart and earning a gold disc, thanks to its breakout single, the winningly complex rap ballad, <a href="https://www.youtube.com/watch?v=01yUzXQctcM" data-link-name="in body link">Ms Fat Booty</a>
and the deftness with which Bey blended politics
He scored key roles in movies such as Brown Sugar
The Italian Job and The Hitchhiker’s Guide to the Galaxy
but it was the almost routine experience of rejection that had perhaps the greatest impact on his art
are you going to be brittle and fall apart
they don’t like me!’ You just gotta keep going
with luminaries from landmark Black rock and metal bands Bad Brains
“I was trying to take all Limp Bizkit’s money!” he says
“It was my funky vendetta against what I felt was appropriation.” He seemed unstoppable
<a href="#img-4" data-ignore="global-link-styling" aria-hidden="true" tabIndex="-1" class="open-lightbox dcr-13fd1ms">View image in fullscreen</a>Don’t panic … Bey in The Hitchhiker’s Guide to the Galaxy
Photograph: Maximum Film/Alamy“But then they foiled my plan,” he scowls
“The label said: ‘We don’t want a rock record
we want you doing that hippity-hop shit.’” His second album
juggled rap tracks alongside his Black Jack Johnson material
was half-heartedly released after more friction with the label; it didn’t even have sleeve art
The music industry now makes the one I started out in seem charitable – it’s so exploitative“I was so disillusioned,” he says today
and then you encounter the kind of conduct and values George Orwell called ‘inanities’
it’s systemic.” When the system itself changed
“paying people part of a penny for their music
lickin’ his lips as he jumps into a pool of gold coins
The music industry of now makes the one I started out in seem charitable
But Bey’s reluctance to cooperate with the streaming behemoths meant his subsequent work was often hard for fans to find
2019’s Negus was an ambitious album/movie/installation you could only experience if you attended limited-engagement art events in Hong Kong or Marrakech
His long-awaited second album with Talib Kweli
was solely available via the podcast network Luminary (it got a belated physical release last December)
<a href="#img-5" data-ignore="global-link-styling" aria-hidden="true" tabIndex="-1" class="open-lightbox dcr-13fd1ms">View image in fullscreen</a>Forensic science … Bey in the studio with the Alchemist
Bey has devised a new scheme to evade the streaming paradigm
Merch on sale at shows and via Bandcamp – including lanyards and branded baseball caps – will contain digital “Bump tags” which
including the group’s forthcoming studio release
tugging at his black cap emblazoned with “Forensics” in white type
Do I look like I’m on some X-Files shit in this
he must be investigating something!’” Bey’s renaissance comes as the world is growing dark
a track about how the mighty mindlessly brutalise those about them
with what he described as “a Turkish parable: ‘When a clown enters a palace
but it may turn the palace into a circus.’” But today he speaks of hope
“We’ve got to resist the despair,” he says
baby.” After too long on the outskirts of the universe
Yasiin Bey has picked up the mic once again
Forensics’ streams and merch are available at <a href="http://yasiinbey.bandcamp.com/" data-link-name="in body link">yasiinbey.bandcamp.com</a>
Their debut studio album is due in the spring
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The MOS model (acronym coming from the French MOdèle Simplifié) was born from the desire to have a simple tool that can quantify the contribution of the diffusive reactive environment to the alteration of a vitrified nuclear waste package in deep geological disposal conditions
this environmental contribution consists partly of the ability of iron
and partly of the brake on diffusive transport provided by silicon through the successive layers of environmental material
It is a modeling tool serving as an intermediary between operational modeling for the calculation of the source term from the glass
mathematically more simple and giving higher upper margins
and models that use geochemistry and transport
giving greater accuracy for the interactions between glass and its environment
The goal of the MOS model is to calculate the possible impact of silicon reactive diffusion on the alteration rate within the different layers of material surrounding nuclear glass
This article lists the simplifying hypotheses on which the MOS is based
presents the digital resolution method for an environment consisting of several successive layers with different reactivity and transport properties
The non-recyclable residues from spent fuel reprocessing that are produced by the electro-nuclear industry account for the bulk of French High Level waste
The country has also carried out research studies into ways of managing the resulting vitrified waste
These studies led to the 2006 decision to implement a deep geological repository
and the French National Nuclear Waste Management Agency (ANDRA) was entrusted with further investigations into this subject
This article presents a new modeling tool with a simplification level between those of the MOP V0 → Vr and of the GRAAL model
for (in French) MOdélisation Simplifiée (Simplified Modeling)
The MOS was designed to meet the need for an easy to use tool able to quantify the contribution from a diffusive reactive environment to glass alteration
whose concentration in the vicinity of the glass controls the glass alteration rate
the diffusive transport of silicon through the successive layers of material in the environment and the way the resulting flux decreases over time
This slowing of matter exchanges decreases glass alteration
</a>Cross-section view of the materials surrounding vitrified waste in the current storage design<a data-track="click" data-track-action="reference anchor" data-track-label="link" data-test="citation-ref" aria-label="Reference 27" title="ANDRA. Rapport Andra CG-TE-D-NTE-AMOA-SR1-0000-15-0060 – « Dossier d’options de sûreté - Partie exploitation ». (2016)." href="/articles/s41529-024-00496-0#ref-CR27" id="ref-link-section-d487351718e423">27</a>
When water in liquid or gaseous form eventually arrives in contact with the glass
the materials surrounding it will have evolved and interacted
Each successive layer of transformed and/or newly formed residual materials will have its own ability to consume the silicon coming from the glass and slow its transfer into the environment by diffusion
consumption in a broad sense and diffusion
The “Theory and Equations” section of this article is divided into two sub-sections
The first part gives the hypotheses regarding the dominant alteration mechanisms in the long term within a reactive environment
These simplifying hypotheses in chemistry and physics are intended to contribute to modeling that does not require the use of a calculation code by finite elements to solve the system of equations
as is the case in implementing the GRAAL model
Thus the MOS hypotheses lead to a simple analytical equation in the case of a semi-infinite homogeneous diffusive environment
The section illustrates the behavior of the equations and gives the magnitudes of alteration rates on the vitrified waste package and its lifetime
depending on the selection of the parameters to be used
The “Discussion” gives a summary of the main conclusions and perspectives concerning the contributions and the uses of such a model
The last part includes i) the method for equation resolution in the general case of several successive layers with different reactivity and transport properties
iii) the implementation of the calculations
one concerning the analytical demonstration of the resolution method and the other describing the entire digital resolution
Silicon’s major role is exploited in the MOS to simplify process modeling
The objective of the MOS is to quantify the consumption of silicon by the environment and
the effect it can have on glass alteration
</a>The diagonal dash-dotted line represents a linear concentration profile in the diffusive barrier
A spherical geometry is used in the MOS for equation resolution (Hypothesis G1, Table <a data-track="click" data-track-label="link" data-track-action="table anchor" href="/articles/s41529-024-00496-0#Tab2">2</a>)
The use of a cylindrical 2D geometry would lead to an underestimation of the ability of the environment to remove matter
as one removal direction would be forgotten
3D modeling would require the use of a reactive transport code
given the complexity of the equation resolution
For a spherical, homogeneous, and semi-infinite medium, the equality of the flux between (i) the quantity of matter coming from the glass dissolution (taking into account the retention of silicon in the alteration film) and (ii) the quantity of silicon diffusing into the environment leads to Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ1">1</a>
\(V\left(t\right)({g}_{\rm{glass}}\,{{m}^{-2}{s}^{-1}})\)
is defined as the glass alteration rate per surface unit of the reactive glass/water interface
This reactive surface is assumed to be the developed surface of the glass package accessible to renewed water under initial-rate conditions (\({S}_{\rm{acc}}{{=S}_{0}T}_{x0}\))
This surface area is greater than the geometric surface area of the package (\({S}_{0}\)) but less than the total surface area of the cracks (\({{S}_{0}T}_{{xf}}\))
are assumed to be already altered under residual rate condition (\({V}_{f}\)) at the initial time of alteration
\({x}_{{\rm{Si}}}({g}_{{Si}}\cdot\,{{g}_{\rm{glass}}}^{-1})\)
the mass fraction of silicon in the unaltered glass
the silicon retention ratio within the alteration film
\({M}_{{\rm{Si}}}\) (\(28.1\,{\rm{g}}\cdot\,{\rm{mol}}^{-1}\))
its effective diffusion coefficient in the environment
\({C}_{\rm{sat}}(\rm{mol}\cdot\,{m}_{{solution}}^{-3})\)
the silicon concentration in contact with the package
\({C}_{\infty }\left(\rm{mol}\cdot\,{m}_{{solution}}^{-3}\right.\)
the effective fracturing ratio under initial rate condition
a ratio between the package glass surface accessible to renewed water
based on the geometric surface area \({S}_{0}=4\pi {R}_{0}^{2}\) of the interface between the package and its environment
and on which the matter balance is written
The reactivity coefficient \({\mathfrak{R}}{\mathfrak{(}}{SU})\) expresses the way the medium reactivity maintains the difference in the chemical potential of silicon
and slows the progression of the silicon front dissolved in the medium
\({\mathfrak{R}}\) is a partition coefficient for silicon between solid and liquid
This formalism is necessary for the equation to preserve a mathematical form that is simple to solve
\({\mathfrak{R}}\) is the ratio between the maximal concentration in the solid after the chemical reaction and the maximal concentration in the solution that can be found in contact with the glass (Cf
Equation <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ1">1</a> is a function of time that describes reactive transport in the semi-infinite medium
There is no analytical resolution in the general case of several successive layers with different properties (different reactivity
Digital resolution for a heterogeneous medium is the main difficulty solved by the MOS
This is presented in detail in the “Method” section
This section also examines the question of water arrival
The objective here is to show the model’s functioning
to illustrate the behavior of the equations
The values of the parameters presented in the “Method” section constitute a basic case used as a reference in this article
Certain values are known with high precision
work remains to be done before this tool can be used to quantitatively predict the lifetime of vitrified waste packages: (i) Validate the MOS hypotheses with the help of modelings dedicated to each hypothesis
the GRAAL model coupled to a reactive transport code would enable the qualification of numerous effects linked to chemistry and transport
substantiated values for the input parameters and give their uncertainties
and (iii) qualify the propagation of these uncertainties throughout the package lifetime
The potentials of the model are illustrated by the sensitivity of three different responses to two parameters: on the one hand
the silicon diffusion coefficient D0 through the metallic envelopes
the reactivity ℜ of these metallic envelopes with silicon
These two parameters have been chosen among those least easy to estimate
As the uncertainty of their values is high
likely to have a high impact on the calculation result
The three responses retained are: (1) The time necessary for the glass alteration rate to reach V0/10 (one-tenth of the initial glass alteration rate)
(2) the time necessary for the glass alteration rate to reach the final alteration rate Vf
and (3) the package lifetime (time necessary for 100% of the package to be altered)
the first calculation result consisted of validating the digital resolution method
</a>The HYTEC reference case (labeled “ref.”) uses a 20 × 100 node mesh for mapping the glass block, cell diameter is 1.3 cm at the glass/barrier interface. The “spaced” case uses a 10 × 50 node mesh for the glass block, cell diameter is 2.6 cm at that interface.
</a>The concentration decrease is more pronounced as one moves farther away from the glass block (colored in dark red
with the lowest concentrations illustrated in dark blue)
The environments surrounding the block can be schematically represented by adapting the mesh at the interfaces
the meshing in space adapts to the calculation conditions
The size of the reference mesh node depends on all the calculation parameters
including the distance from the center of the package
The mesh node sizes enlarge automatically as they move away from the package
They also adapt to the value of the glass’s initial alteration rate
but numerous other hypotheses remain to be confirmed in the coming years
The hypotheses related to chemistry and reactivity will be explored as a priority
they can all be investigated using a glass alteration model coupled with a reactive transport code
A sensitivity study was carried out in order to evaluate the waiting time before the glass alteration rate drops by one order of magnitude
The digital conditions and values retained for the parameters of this calculation
the temperature set at 50 °C and a completely water-saturated medium from the beginning of the calculation
are described in detail in the “Method” section
</a>Sensitivity to the diffusion coefficient D and to the reactivity of the medium are here at 20 °C
The MOS automatically recalculates the D value to the calculation temperature
The upper limit for \({\mathfrak{R}}\) of silicon corresponds to the improbable situation where all the iron in the metallic envelopes reacts exclusively with the silicon in the glass rather than with that in the clay
forming an iron silicate iso-stoichiometric in iron and silicon rather than forming sulfur oxides or carbonates
By thus quantifying the environment’s retroaction on the glass alteration rate
the calculation contributes to the following safety demonstration: it is sufficient to have only slightly reactive materials (a situation where \({\mathfrak{R}}\) &lt; 103) and diffusion coefficients typical of the surrounding clay (D(20 °C) &lt; 10−11 m2·s −1) for the drop in the glass alteration rate to be very fast
as a function of the diffusion coefficient for silicon in the metallic containment envelopes D (at 20 °C)
for the glass alteration rate to reach the final alteration rate (Vf) for four different reactivities within these envelopes
The waiting time before reaching this drop in the rate is much longer than that in the previous calculation for V0/10
This illustrates the fact that while it is easy to guarantee that the alteration rate does not exceed V0/10
the order of magnitude for the ratio V0/Vf
requires a better mastery of the uncertainties associated with the modeling parameters
The greater the reactivity of the materials to silicon
the longer the alteration rate takes to equal the final rate for a given diffusion coefficient
For \({\mathfrak{R}}\) &lt; 103 regardless of the value of D
and for D ≤ 10−11 m2 s−1 regardless of the value of \({\mathfrak{R}}\) (case 1: ascending left side of the curve)
the waiting time to reach Vf increases with the diffusion coefficient
For \({\mathfrak{R}}\) ≥ 103 and D ≥ 10−11 m2 s−1 (case 2: decreasing right side of the curve)
the model gives an illustration of a phenomenology that is difficult to foresee
The waiting time to reach Vf decreases when the diffusion coefficient increases in the metallic envelopes
This is actually due to fact that in case 1 the diffusive barrier consisting of the metallic envelopes alone is enough to slow the transfer of matter and impose Vf
the diffusion front goes no further than the thickness of the metallic envelopes
the diffusion front extends beyond the metallic envelopes
and it is the diffusive medium outside the envelopes that enables Vf to be obtained
indicates that the brake on transport in the zone outside the metallic envelopes is established all the more rapidly when the diffusion coefficient in the metallic envelope zone is high
By only slightly slowing the arrival of the matter in the zone that enables Vf to be reached
but it also means a greater quantity of altered glass
</a>Five different silicon reactivities for the metallic envelopes (4 different curves
the goal was to calculate the impact that the reactive diffusion of silicon within the different layers of material surrounding glass could have on the alteration rate
This alteration rate potentially evolves between the initial hydrolysis rate (a situation where silicon diffuses extremely rapidly in the media) and the final alteration rate (a situation where silicon only diffuses very slowly in the media until reaching the Vf value)
The first application exercises have led to the following general conclusions:
The ability of the materials in the immediate vicinity of the package to consume the silicon coming from glass alteration has a high impact on the glass alteration rate
which essentially occurs through the precipitation of secondary silicated phases
could in turn be limited by the clogging that inevitably accompanies the transformation of dense primary materials into newly-formed hydrated or oxidized minerals
The initial rate V0 enables the alteration to be somewhat over-estimated
but it is not a realistic parameter for package alterations in their repository environment
Even a very reactive environment does not enable the glass block to be altered at V0 for significant durations
This is particularly true when the package temperature is high because the activation energy associated with the surface reaction is higher than that associated with the transport mechanisms
Just the simple thickness of a container in stainless steel
or the long-term of its corrosion products
is enough to account for a rate drop of at least one order of magnitude
Two major groups of perspectives are open at this stage in the model design. The first concerns all the studies associated with reinforcing the robustness of the MOS model. They consist of confirming the relevance of the model hypotheses listed in Table <a data-track="click" data-track-label="link" data-track-action="table anchor" href="/articles/s41529-024-00496-0#Tab1">1</a>
A5) are related to a simplification approach for reactive chemistry-transport codes
They could be explored using a glass alteration model coupled to a reactive transport code (e.g.
these studies will also provide arguments that can enable the identification and
the decrease of unnecessarily high conservative margins associated with certain hypotheses
It will then become possible to determine precisely what constraints concern the intrinsic and relative values of the parameters
in order to meet a satisfactory package performance level (source term
fraction of the package altered at the end
Equation <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ1">1</a> (Equation for a homogeneous environment) is a function of time that describes reactive transport in a semi-infinite media
The complexity of the calculation given in Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ1">1</a> mainly comes from the fact that transport and reactivity are simultaneous
The silicon is transported and consumed at the same time
whether it is saturating the solution in the pores or saturating the reactivity of the surrounding materials
Thus the idea behind the simplified resolution of the MOS for an environment that is heterogeneous in reactivity and in transport properties was to decouple chemistry and transport
This idea is supported by the following points:
The reactivity of silicon with the environment is fast, compared to its diffusive transport. This hypothesis, though over-estimating somewhat, is consubstantial with the simplifying hypothesis R1 (Table <a data-track="click" data-track-label="link" data-track-action="table anchor" href="/articles/s41529-024-00496-0#Tab1">1</a>)
Decoupling is justified by the large number of mesh nodes used
similar to what occurs in a reactive transport calculation code where the solution composition is homogeneous within a calculation mesh node
to calculate the time necessary to fill and saturate the reactivity of a mesh node
This includes the quantity of dissolved silicon plus the quantity of silicon retained in newly formed solids
to take into account the brake on diffusive transport created by a mesh node once its reactivity is exhausted
</a>Diagram of the simplifying method principle for multilayer system resolution
nor the media reactivity \({\mathfrak{R}}\)
It is applied iteratively between the internal radius R1 and an external radius R2 that increases with the number of mesh nodes whose reactivity has been saturated
The concentrations at the limits \({C}_{1}\) and \({C}_{2}\) are respectively the concentration of silicon in contact with the package (\({C}_{1}={C}_{{sat}}\)) and the concentration in the distant medium (\({C}_{2}={C}_{\infty }\))
The approximation for a transitory regime using the equation for a permanent regime is classical in diffusive transport
it consists in approximating the concentration profile with a linear profile
the approximation gives a systematic error that is a constant close to 1
a second approximation is added compared to the analytical equation
Overly large meshing would artificially maintain alteration throughout the time needed to saturate the entire volume of the mesh node before taking into account its diffusive braking
overly-small meshing could lead to under-estimation of the diffusive flux
as the permanent regime equation corresponds to the weakest concentration gradient vertical to the package
There is a special mesh size able to remove the same silicon flux as that coming from the package when glass is altering at the initial rate. This size is noted \({\Delta L}_{0}\), and depends on the radius. \({\Delta L}_{0}\) is the size of the reference mesh with inner radius R1 and outer radius R2 that verifies Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ3">3</a>
where \({\Delta L}_{0}={R}_{2}-{R}_{1}\) :
Considering that for the current mesh, \({C}_{1}=0\) and \({C}_{2}={C}_{{sat}}\), \({\Delta L}_{0}\) is given by Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ4">4</a>:
R0 is the radius of the glass block (Equation for a homogeneous environment)
The size \({\triangle L}_{0}({R}_{1})\) given by the approximate expression of Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ4">4</a> becomes smaller as the diffusion coefficient of the porous medium lowers
which gives the equivalent diffusion coefficient Deq
for a layer of thickness Leq corresponding to the summation of the thicknesses of the layers having their individual diffusion coefficient
Applied in spherical 1D and expressed under the iterative form implemented in the calculations, this equation becomes Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ6">6</a>
It gives the equivalent diffusion coefficient for the diffusive medium with the same thickness
it is possible to solve the considered equations for a heterogeneous environment composed of several layers with different properties
This section presents all the input parameters. The package parameters are listed in Table <a data-track="click" data-track-label="link" data-track-action="table anchor" href="/articles/s41529-024-00496-0#Tab3">3</a>
The geometric surface of the cylindrical block is calculated using the radius and the height
This surface is multiplied by the maximum surface flux achievable in this geometry
This maximum surface flux is the one discharged in three spatial directions by a sphere with a radius equivalent to that of the cylindrical package
Multiplying the surface flux from a sphere by the total external surface of the cylinder is the overestimating choice made in the MOS
Everything happens as if we were altering three spherical packages
This assumption overestimates the reactivity of the environment
Such a significant margin could be reduced through modeling dedicated to the study of the G1 hypothesis
It should be noted that the “fracturing ratio” is a parameter that does not only come from fracturing in the package
It also depends on the flow of water in the cracks and the initial alteration rate of the glass
what is called the “fracturing ratio” is defined as the ratio between the quantity of altered glass measured and that which would be obtained if the block was monolithic
It corresponds to a magnitude measured during the alteration of scale one 400 kg glass block and reflects the brake on the transport of the matter that is within a fractured glass block
It is a function of the first-order glass alteration and of the ability of the glass block cracks to remove the matter coming from glass dissolution
When the solution is said to be saturated with respect to the passivating gel and the solution composition is no longer the first-order limitation on the alteration rate
all the surfaces contribute to the alteration in the same way
which is also the ratio between the surface concerned and the geometric surface of the package
equal to the block’s total fracturing ratio \({T}_{{xf}}({\rm{SU}})\)
for a block of glass submerged in a regularly renewed solution of pure water
the external surface alters at the maximal alteration rate for the glass
to which are added the contributions just from the cracks close to the external surface (in which the solution is sufficiently renewed)
The internal cracks quickly constitute a very confined medium where the solution is loaded with elements from the glass alteration
the alteration rate drops by several orders of magnitude
and the contribution from these internal surfaces to the total quantity of altered glass is low
The contribution from the surfaces that apparently alter at the initial rate (external surfaces) corresponds to approximately 4 times the geometric surface
giving an effective fracturing ratio of 5 in V0
This figure is the result of the quantity of altered glass brought to the external geometric surface during the alteration of a scale one block of glass in constantly-renewed pure water at 100 °C
This effective fracturing ratio at \({V}_{0}\) \({T}_{x0}({\rm{SU}})\) is the parameter applicable for an initial rate V0 in glass alteration
The competition between reactive transport within the block and glass dissolution kinetics is the source of this fracturing ratio value
</a>Diagram showing progressive saturation in liquid water
The law \(h\left(t\right)\) is therefore defined based on the parameters of time (\({t}_{0},{t}_{1},{t}_{2},{t}_{3}\)) and of the fraction of submerged height (\({h}_{1},{h}_{2},{h}_{3},\) corresponding respectively to the fractions submerged at the times
The package is completely submerged at time \({t}_{3}\)
ΩNon-subm and Σsubm correspond respectively to the non-submerged internal volume (in Supplementary Information Note <a data-track="click" data-track-label="link" data-track-action="supplementary material anchor" href="/articles/s41529-024-00496-0#MOESM1">3</a>, column Y) and the submerged external surface of the package (Supplementary Information Note <a data-track="click" data-track-label="link" data-track-action="supplementary material anchor" href="/articles/s41529-024-00496-0#MOESM1">3</a>
expressed in function of the fraction of submerged height h
The glass alteration parameters are listed in Table <a data-track="click" data-track-label="link" data-track-action="table anchor" href="/articles/s41529-024-00496-0#Tab5">5</a>
The rates \({V}_{0},{V}_{f}\,{\rm{and}}\,{V}_{\rm{hydr}}\) are calculated depending on the temperature and the pH according to the following laws (Eqs. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ10">10</a>–<a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ12">12</a>):
Rcompsol in Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ10">10</a> is the correction factor for the solution composition
equal to 1 in initially pure water and 5 in Bure porewater
The residual rate for glass alteration in a closed system is called the final rate
This term was chosen to distinguish it from the residual rate in the environment
a term that has gained wider acceptance in recent publications
The chemical and geometric parameters for the environment are listed in Table <a data-track="click" data-track-label="link" data-track-action="table anchor" href="/articles/s41529-024-00496-0#Tab6">6</a>
</a>This tab shows the input parameters to be entered and the calculation results: evolution through time of the alteration rates
only intended to illustrate the calculation
The diffusion coefficient for silicon at temperature is calculated with the value given at 20 °C, using a polynomial law reproducing the Stokes-Einstein law between 0 and 90 °C (Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ13">13</a>)
The physico-chemical reality of the interaction between silicon and the environmental materials is probably different depending on the material in the interaction
and potentially more complex than a partition coefficient
For example, as concerns an iron silicate precipitation, the following approach is suggested: \({\mathfrak{R}}\) is defined as the ratio between the maximal concentration in the solid after the chemical reaction and the maximal concentration in solution that can be found in contact with the glass (Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ14">14</a>)
hypothesis R1 must enable a slightly overestimated modeling of the silicon and iron interaction
A digital application in the case of metallic iron allows calculation of the maximal possible value for \({\mathfrak{R}}\): the metallic iron has an iron concentration \({C}_{{\rm{Fe}}}(\rm{mol}\,{m}^{-3}\,{of\,solid})\) equal to its density divided by its molar mass
considering (i) \({x}_{{\rm{Si}}/{\rm{Fe}}}=1\)
and (iii) a silicon concentration at saturation close to \(1\,{\rm{mol}\,{m}^{-3}}\)
iron transformed into iron silicate occupies at least twice the volume of metallic iron
we arrive at \({\mathfrak{R}}{\mathfrak{ &lt; }}{10}^{6}\) for iron
This means a maximum acceleration factor of \({10}^{3}\) for the alteration rate when it is controlled by reactive diffusion into the environment
The same factor applies throughout the initial rate phase
For magnetite transforming into iron silicate
\({\mathfrak{R}}\) is \(&lt; 6\times {10}^{5}\)
implementing the calculation is simple as the resolution method enables each cell to be calculable by an equation
The calculation principle is explained here:
Each calculation line represents a mesh node
The first columns are used to read the characteristics of the mesh in question: number
and the reactivity of the zone the mesh node belongs to
Logic tests using embedded “if” functions are used to identify these different magnitudes
The reference size \({\triangle {\rm{L}}}_{0}\) is calculated (Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ4">4</a>
Resolution method for a heterogeneous environment)
depending on its position and the physico-chemical properties of the zone
It gives the thickness of the node in question and is used to calculate the internal radius of the following mesh node
Knowing the current diffusion coefficient in the mesh node and its size, it is possible to deduce the value of the equivalent diffusion coefficient through the medium consisting of the current node and of all the previous ones (Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ6">6</a>
Knowing the equivalent diffusion coefficient for all the previous nodes, the flow of silicon entering the mesh node can be found (Eq. <a data-track="click" data-track-label="link" data-track-action="equation anchor" href="/articles/s41529-024-00496-0#Equ2">2</a>
The volume of the spherical corona corresponding to the current mesh node is calculated
the quantity of silicon retained in the corona can be deduced
this calculation slightly overestimates the quantities of solution and of reactive minerals effectively contained in the package periphery
From the flow of silicon entering the mesh node and the quantity contained in the corona
the time necessary to fill the current node can be calculated
This indexes the evolution of time in the calculation sheet
From the flow of silicon entering the mesh node
the glass alteration rate is deduced taking into account the silicon content in the glass and the silicon retention ratio in the alteration products
This rate is normalized at the geometric surface of the package
It is the alteration rate in water under the effect of the reactive diffusion of silicon
This is compared to the initial rate \(({V}_{0})\)
and to the rate in vapor phase \(({V}_{\rm{hydr}})\)
These rates are each normalized at the geometric surface of the package in order to compare them
they apply to different surfaces: effective surface in initial rate \(\left({S}_{\rm{acc}}{=S}_{0}{T}_{x0}\right)\)
and vapor phase \(({S}_{\rm{tot}}{=S}_{0}{T}_{{xf}})\)
The quantities of altered glass are calculated
They are deduced from the rates and from the fractions of the package surface to which they apply: the external surface for a submerged package for the rate under water
or the internal above-water surface for the vapor phase
The sum of the quantities altered under water and under the vapor phase gives a total quantity of altered glass
Knowing whether the matter altered during the vapor phase is available to be transported into the environment is a question that is not dealt with here
The MOS model is resolved in a calculation sheet
The model is also resolved in a dedicated program written in C language
in order to simplify studies of uncertainty propagation
Figure <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41529-024-00496-0#Fig10">10</a> shows the “MOS” tab on the calculation sheet
The upper half presents the input parameters
while the lower half gives graphs of the results
The graph on the left shows the rates under water through time \(\left(V(t)\right)\)
All are normalized at the geometric surface of the package in order to be able to compare them
The left graph also shows the advance of the diffusion front
The graph on the right gives the quantities of glass altered under water and in the vapor phase
as well as the sum of the two contributions
Logarithmic scales are used on all the axes
the choice of their scales are updated automatically to enable the preservation of a correct view of the results as soon as the value of a parameter is changed
The initial time of the graphical representation is the moment water arrives at the package (in liquid or in vapor phase)
In the top center of the sheet (pinkish blocks) is a summary of the calculation in figures
It is possible to select a quantity of altered glass in the cell «FVA Search”»
The spreadsheet searches among the thousands of calculation lines for the closest value below or equal to this
It gives the total fraction value of altered glass \(\left({\rm{FTVA}}( \% )\right)\) and the time at which it was reached
this time takes into account the time \({t}_{0}\) passed before the water’s arrival
It also gives the FVA under water (FVAwater) and in the vapor phase (FVAvapor) at that time
water arrives after 1000 years in the form of vapor
Liquid water completely and suddenly replaces the vapor phase after 5000 years
The MOS model originated in the desire to have a simple tool that explicitly integrated the contribution from the reactive diffusive environment to the alteration of a nuclear waste package in deep geological repository conditions
The model enables a quantification of the environment’s contribution to glass alteration
The structure of the model has been presented
its predictive use should remain limited until the key initial steps of validation through reactive transport code coupled with glass alteration model
the model already provides a framework for considering the influence of each parameter over the relevant scales of time and space on the predominance of alteration mechanisms
helps anticipate the consequences of disposal concept choices
the model provides a way to quantify the extent of margins taken by simpler safety models
The MOS remains a simple and envelope model
It is not intended to replace best estimate models (reactive transport code + glass alteration model)
It improves the connection between safety models and scientific models
the proposed model holds general significance for assessing the alteration of minerals and materials in their environment
Its uniqueness lies in the reversal of the classical paradigm
wherein the focus is on evaluating the long-term evolution kinetics of a mineral by considering its intrinsic characteristics rather than accounting for the reactivity and transport properties of its environment
is formalized and can be easily adapted to other minerals
It remains straightforward in the case of a single layer with constant transport and reactivity properties
The original resolution method for reactive transport in the case of multiple layers has been described in detail
It could be useful for other corrosion issues when it is a question of whether or not a diffusive medium can remove the matter in solution by a surface reaction
The authors declare that the data supporting the findings of this study are available within the article and its supplementary information files
The code generated during the current study is not publicly available due to confidentiality agreements with third parties
it is available from the corresponding author on reasonable request
Dossier d’Autorisation de création de l’installation nucléaire de base (INB) CIGEO - Pièce 0 Présentation non technique
36 (ANDRA CG-TE-PRE-AMOA-PUO-0000-21-0026/A
Dossier d’options de sûreté - Partie après fermeture (DOS-AF)
Modèles opérationnels et calculs d’intégration
in Advances for future nuclear fuel cycles Nimes
SON68 Nuclear glass dissolution kinetics: current state of knowledge and basis of the new GRAAL model
Analytic implementation of the GRAAL model: application to a R7T7-type glass package in a geological disposal environment
Application of the GRAAL model to leaching experiments with SON68 nuclear glass in initially pure water
Composition effects on synthetic glass alteration mechanisms: Part 1
Long-term modeling of alteration-transport coupling: application to a fractured Roman glass
Borosilicate glass alteration driven by magnesium carbonates
Effect of clayey groundwater on the dissolution rate of the simulated nuclear waste glass SON68
HLW glass dissolution in the presence of magnesium carbonate: Diffusion cell experiment and coupled modeling of diffusion and geochemical interactions
Modeling resumption of glass alteration due to zeolites precipitation
Projet de stockage Cigéo—Examen du Dossier d’Options de Sûreté
Role and properties of the gel formed during nuclear glass alteration: importance of gel formation conditions
Structure of International Simple Glass and properties of passivating layer formed in circumneutral pH conditions
Origin and consequences of silicate glass passivation by surface layers
Investigation of gel porosity clogging during glass leaching
Module-oriented modeling of reactive transport with HYTEC
Dissolution mechanism of the SON68 reference nuclear waste glass: New data in dynamic system in silica saturation conditions
The Uranie platform: an open-source software for optimisation
Rapport Andra CG-TE-D-NTE-AMOA-SR1-0000-15-0060 – « Dossier d’options de sûreté - Partie exploitation »
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The authors wish to thank the organizers of the Sernhac Seminar and its participants
a working group that lasted several days and from which this model was born: Bernard BONIN
This work was made possible by funding from CEA
report writing; Nicole GODON: coordination
exploitation of the model and sensitivity studies
writing and proofreading; Yves MINET: checking equations and their resolution
Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations
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Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling
The spin-orbit coupling produces complex hole-spin dynamics
providing opportunities to further optimise spin qubits
we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot
We demonstrate rapid qubit control with singlet-triplet oscillations up to 400 MHz
which is enhanced to 1.3 μs using refocusing techniques
We investigate the magnetic field anisotropy of the eigenstates
and determine a magnetic field orientation to improve the qubit initialisation fidelity
These results present a step forward for spin qubit technology
by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits
Given the difference in spin–orbit effects between Ge and Si
investigations into Si are needed to provide an understanding of Si holes
there are no demonstrations of a singlet-triplet qubit using holes in silicon
We identify the exact hole occupation of the double dot
which is critical for experimental reproducibility and detailed theoretical modelling of this system
In addition to characterising the key parameters of the qubit
we perform an investigation into the anisotropy of the two-hole eigenstates
By comparing the experimental results with a model that includes spin–orbit coupling and anisotropic site-dependent g-tensors
we identify key features in the eigenstates that allow the improvement of the initialisation fidelity and reduction in the readout errors
The coloured arrows indicate the energy transitions observed in the preceding experiments
and ΔST indicates the size of the avoided crossing between \(\left\vert S\right\rangle\) and \(\left\vert {T}_{\pm }\right\rangle\)
Orange dashed lines show how the (1,9) states evolve in the absence of spin–orbit coupling
d The results of a spin funnel experiment with the pulse sequence are shown in the inset
The spin-funnel experiment was performed by initialising \(\left\vert {S}_{2,8}\right\rangle\)
followed by a rapid pulse to a point along the detuning axis (ϵ)
the state was allowed to evolve for a fixed separation time
The change in sensor signal (ΔI) due to this pulse indicates the likelihood of the returned state being singlet (low ΔI) or triplet (high ΔI) (described in more detail in the Methods)
Red arrows indicate the Δg-driven oscillations
e The same pulse procedure as in d) except the magnetic field is fixed at Bx = 5 mT and we investigate the effect of varying the separation time (τS) at each detuning (ϵ)
Transparent lines indicated the best fit of the observed energy splittings to the eigenstates of HST
and the colours correspond to the transitions indicated in (c)
In Fig.&nbsp;<a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig1">1</a>c
we plot the eigenenergies of HST as a function of detuning
the eigenstates are the (\(\left\vert {T}_{+}\right\rangle,\left\vert {T}_{0}\right\rangle,\left\vert {T}_{-}\right\rangle,\left\vert S\right\rangle,\left\vert {S}_{2,8}\right\rangle\)) basis states
the eigenstates evolve into the \(\left\vert {S}_{2,8}\right\rangle\) state and the four two-spin states (\(\left\vert \uparrow \uparrow \right\rangle,\left\vert \uparrow \downarrow \right\rangle,\left\vert \downarrow \uparrow \right\rangle,\left\vert \downarrow \downarrow \right\rangle\))
which are defined by the sum or difference of the Zeeman energy in the two dots
The \(\left\vert \uparrow \downarrow \right\rangle\) and \(\left\vert \downarrow \uparrow \right\rangle\) eigenstates have energy splitting given by
on the positive detuning side of the funnel edge
we see oscillations that result from Δg-driven \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{0}\right\rangle\) oscillations (red arrows)
We fit the observed frequencies in Fig.&nbsp;<a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig1">1</a>f to the eigenergies of the singlet-triplet Hamiltonian, HST and extract key parameters of the two-hole system. Transparent lines in Fig.&nbsp;<a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig1">1</a>f show the best fit
demonstrating good agreement between the observed and theoretical eigenenergies
we extract tc = 9 ± 1 μeV and two effective g-factors of 0.8 ± 0.1 and 1.2 ± 0.1 for Bx
e Shows the eigenenergies for ∣B∣ = 10 mT magnetic field applied at θ = 0∘ (purple)
110∘ (brown) and 180∘ (cyan) in the x-y plane
and the x-axis ticks are separated by 1 meV
The energy splitting corresponding to the three FFT peaks in (d) are indicated by the red
The size and location of the \(\left\vert S\right\rangle\)-\(\left\vert {T}_{-}\right\rangle\) avoided crossing varies with field orientation (black dashed circle)
resulting in anisotropy in the Landau–Zener transition probability between \(\left\vert {S}_{2,8}\right\rangle \to \left\vert {T}_{-}\right\rangle\) during the ramp-in/ramp-out
The black dashed lines indicated the splitting of the initial state when pulsing across the ΔST avoided crossing
f The solid black line is the calculated probability of the \(\left\vert {S}_{2,8}\right\rangle\) loading into \(\left\vert {T}_{-}\right\rangle\) during the separation pulse (\({P}_{{T}_{-}}\)
Blue markers indicate the amplitude of the \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{-}\right\rangle\) FFT peak in (d) (transparent blue)
Both data were plotted as a function of the in-plane magnetic field angle
The trend in \({P}_{{T}_{-}}\) correlates with the amplitude of the \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{-}\right\rangle\) oscillations in (d)
The correlation between \({P}_{{T}_{-}}\) and the \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{-}\right\rangle\) oscillation amplitude is expected since the \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{-}\right\rangle\) oscillations are enhanced as the probability of loading the \(\left\vert {T}_{-}\right\rangle\) state increases
The full g-tensors are presented in the methods
We find that the orientation of the g-tensor principle axes for left and right dots are slightly misaligned
which may result from differences in confinement profile or non-uniform strain between the left and right dots
The observation of misalignment in the g-tensor principle axes suggests accurate modelling of multiple quantum dot systems in silicon should incorporate site-dependent g-tensors with differing principle axes
we plot the energy spectrum of the two-hole system for various in-plane magnetic field orientations
The magnetic field orientation strongly influences the magnitude of \({\Delta }_{S{T}_{\pm }}\) and the position in detuning (ϵΔ) at which the avoided-crossing occurs
the magnetic field orientation impacts the likelihood of populating the \(\left\vert {T}_{-}\right\rangle\) state during the separation ramp and thus impacts the amplitude of the \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{-}\right\rangle\) FFT peak
with both exhibiting a peak around θ = 120°
and an asymmetric reduction towards 0° and 180°
The correlation between FFT amplitude and the calculated \({P}_{{T}_{-}}\) demonstrates that the model HST and optimal fit parameters capture the dynamics of the hole-spin qubit well (see Methods)
and therefore is an optimal field orientation for the singlet-triplet qubit in this system
leverages both the observed eigenenergies (FFT frequencies) and occupation probabilities (FFT amplitudes) in order to determine an optimal fit
we note that this method does not acquire a unique fit
we highlight that the optimal fits is sufficient to accurately reproduce the key qubit dynamics (see methods)
Therefore this approach provides a method for extracting key qubit parameters for devices where EDSR is either not possible (such as in the very low magnetic field regime) or not available
We now turn to experiments to characterise the hole-spin qubit
the qubit is defined using the \(\left\vert S\right\rangle\) and \(\left\vert {T}_{0}\right\rangle\) states of the double quantum dot
The simplified Hamiltonian for this system can be written as
Error bars in (f–h) are the standard deviation in the measured value
Figure&nbsp;<a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig3">3</a>c plots the measured singlet probability PS as a function of separation time τS for three different ∣Bx∣, demonstrating oscillations in PS. Solid lines in Fig.&nbsp;<a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig3">3</a>b show the best fit of the data to the equation
where fR is the Rabi frequency, τs is the separation time, ϕ is a phase offset, \({T}_{2}{*}\) is the qubit dephasing time, A is the oscillation amplitude, C is an offset, and α captures the noise colour (see Supplementary Note&nbsp;<a data-track="click" data-track-label="link" data-track-action="supplementary material anchor" href="/articles/s41467-024-51902-9#MOESM1">5</a>)
we show electrical control over Δg* using the Jg gate
demonstrating in-situ electrical control of the qubit control frequency
the variation in \({T}_{2}{*}\) can be modelled using
Finally, in Fig.&nbsp;<a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig3">3</a>h
we show that the quality factor (\(Q={f}_{R}\times {T}_{2}{*}\)) of the Δg-driven singlet-triplet oscillations increases as the control speed increases
The quality factor quantifies the number of coherent oscillations that can be completed within the coherence time
A promising feature of this qubit is that Q increases with increasing fR
indicating that the qubit control speed can be increased without degrading the quality
In order to achieve full control of the singlet-triplet qubit it is necessary to produce control pulses that allow access to the full 3D Bloch sphere
We use exchange-driven oscillations to rotate the qubit around the z-axis of the Bloch sphere
By combining Δg-driven (x-axis) and exchange-driven (z-axis) rotations
it is possible to achieve full control over the qubit Bloch sphere
and the inset in (f) shows the dephasing time as a function of the detuning for Jg = −1.4 V
Error bars in (d–f) are the standard deviation in the measured value
the exchange-driven oscillations are highly tunable
since J can be electrically tuned either by varying ϵ with the plunger gates
These results demonstrate coherent exchange-driven z-axis control of the singlet-triplet qubit
where charge noise (δϵ) dominates at low detuning due to enhanced dJ/dϵ
while Zeeman noise (δΔEZ) dominates at large detuning where \(dJ/d\epsilon\,{\to}\,0\)
The experiments were performed for Bx = 1.6 mT
Although we see an improvement of 120% by applying one pulse
we see no significant improvement when using two refocusing pulses
This suggests the maximum may have been reached for this simplified refocusing procedure
In this work we have demonstrated a hole-spin singlet-triplet qubit in planar silicon
We demonstrate rapid \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{0}\right\rangle\) oscillations exceeding 400 MHz
two-axis control via Δg-driven and exchange-driven oscillations
and enhancement of the qubit coherence time to &nbsp;&gt;1 μs using spin-echo procedures
Developing a complete model of the energy spectrum provided insight into spin qubit dynamics under rapid pulses across the \(\left\vert S\right\rangle \leftrightarrow \left\vert {T}_{-}\right\rangle\) avoided crossing
The experimentally observed effects were well described by the model Hamiltonian
This demonstrates that additional modelling would be useful for simulating new methods to further optimise initialisation protocols in hole-spin qubits
such as identifying optimal magnetic field orientations or simulating more complex pulsing procedures
An open question that will impact the future direction of hole-spin qubit technology is the extent of variation of key qubit parameters (such as the g-tensor and spin orbit vector) across different devices
and how well these can be controlled in-situ
a future direction for this research is investigating the effects of in-situ controlled operating parameters
such as occupation number and confinement shape
All experiments were performed using a top-loading BlueFors XLD dilution fridge with a three-axis vector magnet
the experiments were performed with the fridge at base temperature where the mixing chamber thermometer was 40 mK
Previous measurements indicated that at base
this system achieves electron and hole temperatures of 120 mK
The device was fixed directly onto a brass sample enclosure that is thermally anchored to the probe cold-finger
GE varnish was used to mount the device directly onto a brass sample stage
and Al bond wires connected the sample to a homemade printed circuit board
All DC biasing was applied using a Delft IVVI digital-to-analogue converter using lines which each pass through individual 50-kHz low pass filters mounted to the cold-finger (40 mK)
The current through the SET was amplified using a Basel SP983c I-V preamplifier
DC currents were then monitored using a Keithly 2000
and standard low-frequency lock-in techniques were implemented using an SR830
since any longer integration times did not yield any increase in measured parameters (\({T}_{2}{*}\) or \({T}_{{{{\mathrm{Echo}}}}}{*}\))
Landau–Zener processes are discussed in relation to Fig.&nbsp;<a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig2">2</a>
The probability of maintaining the initial eigenstate when ramping across an avoided-crossing can be understood in terms of the Landau–Zener transition probability
while the black schematic shows the sequence for two refocusing pulses
The free evolution time is the total time of the entire refocusing pulse sequence
where N is the number of exchange-driven π pulses used
we can vary the free evolution time by increasing the tS(n) dwell time
The entire pulse sequence is designed to refocus the qubit to a singlet state
regardless of the total free evolution time tf(n)
</a>a–c The optimal fit g-factors gL (blue) and gR (red) plotted as a function of magnetic field orientation
There is a clear misalignment between the principle axes of the left and right g-tensors
The spin–orbit vector is plotted in green in (a)
We note that while gL and gR are used to denote the two distinct g-tensors extracted from the fitting procedure
we are not able to assign either gL or gR to a dot under a specific plunger gate
The black dashed lines are transposed from (a)
We note that the experiment in (a) takes ~3 h to perform and is limited by the integration time of the SRS830 lock-in (0.3 ms)
and is limited by the number of PC cores running simultaneously
Note that the principle axes of the left and right g-tensor are slightly misaligned with respect to each other
The data related to this study have been deposited in the Zenodo database, accessible at <a href="https://zenodo.org/records/12803637">https://zenodo.org/records/12803637</a> and <a href="https://github.com/ScottLiles/HoleSTQubit.git">https://github.com/ScottLiles/HoleSTQubit.git</a>
The code generated in this study have been deposited in the Zenodo database accessible at <a href="https://zenodo.org/records/12803637">https://zenodo.org/records/12803637</a> and <a href="https://github.com/ScottLiles/HoleSTQubit.git">https://github.com/ScottLiles/HoleSTQubit.git</a>
Cryogenic control architecture for large-scale quantum computing
Silicon CMOS architecture for a spin-based quantum computer
Universal quantum computation with spin-1/2 pairs and Heisenberg exchange
Coherent manipulation of coupled electron spins in semiconductor quantum dots
Coherent singlet-triplet oscillations in a silicon-based double quantum dot
A silicon metal-oxide-semiconductor electron spin-orbit qubit
Coupling two spin qubits with a high-impedance resonator
Superconductor–semiconductor hybrid-circuit quantum electrodynamics
Parametric longitudinal coupling between a high-impedance superconducting resonator and a semiconductor quantum dot singlet-triplet spin qubit
High-fidelity two-qubit gates of hybrid superconducting-semiconducting singlet-triplet qubits
A programmable two-qubit quantum processor in silicon
Universal control of a six-qubit quantum processor in silicon
Hotter is easier: unexpected temperature dependence of spin qubit frequencies
A hole spin qubit in a fin field-effect transistor above 4 kelvin
Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
Nature of tunable hole g factors in quantum dots
Electrical spin driving by g-matrix modulation in spin-orbit qubits
Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
Electrical control of the g tensor of the first hole in a silicon MOS quantum dot
Strong spin-orbit interaction and g-factor renormalization of hole spins in Ge/Si nanowire quantum dots
Hole spin driving by strain-induced spin-orbit interactions
Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots
Ultrafast hole spin qubit with gate-tunable spin–orbit switch functionality
Decoupling a hole spin qubit from the nuclear spins
Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
A single hole spin with enhanced coherence in natural silicon
A qubit with simultaneously maximized speed and coherence
A singlet-triplet hole spin qubit in planar Ge
Dynamics of hole singlet-triplet qubits with large g-factor differences
Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
Electrical operation of hole spin qubits in planar MOS silicon quantum dots
Anisotropic exchange interaction of two hole-spin qubits
All-electrical control of hole singlet-triplet spin qubits at low-leakage points
Surface codes: towards practical large-scale quantum computation
A surface code quantum computer in silicon
A crossbar network for silicon quantum dot qubits
Combining n-MOS charge sensing with p-MOS silicon hole double quantum dots in a CMOS platform
Ambipolar charge sensing of few-charge quantum dots
Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
Enhanced charge detection of spin qubit readout via an intermediate state
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Spin-Orbit Coupling in Two-Dimensional Electron and Hole Systems (Springer
Spin blockade in hole quantum dots: tuning exchange electrically and probing Zeeman interactions
A coherent beam splitter for electronic spin states
Qutip: an open-source python framework for the dynamics of open quantum systems
Universal set of quantum gates for double-dot spin qubits with fixed interdot coupling
Charge noise spectroscopy using coherent exchange oscillations in a singlet-triplet qubit
Hyperfine interactions in silicon quantum dots
Two-axis control of a singlet–triplet qubit with an integrated micromagnet
First-principles hyperfine tensors for electrons and holes in GaAs and silicon
Composite pulses for robust universal control of singlet–triplet qubits
Operating semiconductor quantum processors with hopping spins
Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
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All authors acknowledge funding from the Australian Research Council (Grants No
FL190100167) and the US Army Research Office (Grant No
acknowledges an ARC industrial laureate fellowship (IL230100072)
acknowledges the SNSF NCCR SPIN International Mobility Grant
Devices were made at the New South Wales node of the Australian National Fabrication Facility
School of Electrical Engineering and Telecommunications
S.D.L. performed the experiments and analysis. F.E.H. and W.H.L. fabricated the device. Z.W., D.C. and S.D.L. developed the model for HST. D.J.H. and S.D.L. developed the QuTIP code used to simulate hole-spin dynamics. J.Y.H. and C.C.E. produced the 3D model Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41467-024-51902-9#Fig1">1</a>a
wrote the manuscript with input from all co-authors
contributed to the discussion and planning
The remaining authors declare no competing interests
Nature Communications thanks the anonymous reviewers for their contribution to the peer review of this work
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DOI: https://doi.org/10.1038/s41467-024-51902-9
By GLEN OWEN and <a href="/profile-2084/dan-hodges.html" class="author">DAN HODGES</a> 
Sir <a style="font-weight: bold;" target="_self" href="/news/keir-starmer/index.html" id="mol-b22cbf10-285a-11f0-b641-3f88cc7fcff7">Keir Starmer</a> has been warned by a <a style="font-weight: bold;" target="_self" href="/news/labour/index.html" id="mol-b24f8950-285a-11f0-b641-3f88cc7fcff7">Labour</a> MP that he is facing a 'life or death' moment after last week's election results – because the party has lost its connection to its working-class base
Speaking in the wake of <a style="font-weight: bold;" target="_self" href="/news/nigel_farage/index.html" id="mol-b2396940-285a-11f0-b641-3f88cc7fcff7">Nigel Farage</a>'s 'Reform‑quake'
As the Reform leader celebrated winning the formerly safe Labour seat of Runcorn and Helsby
picking up two mayoralties and securing 677 council seats
Labour MPs warned Sir Keir that the party was heading for oblivion if he did not regain the 'trust of the people'
Mr Carden writes: 'It was the working class that turned its back on Labour last Thursday
'They understand that the present system is not working in their interests
People feel abandoned… They look at Westminster and see strangers in charge.'
It comes as a poll published in today's newspaper finds that most voters expect Mr Farage to become the next Prime Minister
63 per cent of people think that Mr Farage will win the keys to No 10 at the next election – more than double the 31 per cent who back Sir Keir
and over ten times the 6 per cent who think Tory leader Kemi Badenoch will turn around her party's fortunes
When asked if Labour should ditch Sir Keir as leader
A similar proportion – 70 per cent – think the Tories should remove Ms Badenoch
Speaking in the wake of Nigel Farage's 'Reform‑quake'
71 per cent of Mail on Sunday pollers agreed
A similar proportion – 70 per cent – think the Tories should remove Kemi Badenoch
Many Labour MPs fear that the party's 'obsession' with the Net Zero policies championed by Energy Secretary Ed Miliband
are driving their supporters into the arms of Reform
Tony Blair's criticism of Labour's climate policies last week
when he pointed out that people were 'being asked to make financial sacrifices and changes in lifestyle when they know that their impact on global emissions is minimal'
Labour backbenchers say that the party's loss of connection to its blue-collar base is being exacerbated by a lack of decisive leadership
the usual response from the ruling party is that we are listening
said Sir Keir Starmer 'needs to start showing [strong] leadership and stop the Government pussyfooting around'
Q: Who do you think is most likely to be the next Prime Minister
Q: Should the Conservatives remove Kemi Badenoch
Find Out Now interviewed 2,632 GB adults on 2025-05-02
and produced a representative sample of 2,007 respondents
Sir Keir Starmer needs to start showing [strong] leadership and stop the Government pussyfooting around
He should take a leaf out of President Trump's book by following his instincts and issuing some executive orders.'
Ms White added that the Government's decision to strip more than ten million pensioners of their winter fuel payments had become 'our poll tax problem'
which saw Dame Andrea Jenkyns be elected mayor of Greater Lincolnshire and Sarah Pochin win the Runcorn and Helsby by-election
as marking 'the end of two-party politics' and 'the death of the Conservative Party'
He vowed to reject migrants from Reform-run council areas and make Trump-style cuts across local governments
where Reform dislodged a 100-year Labour monopoly
to claim that migrants were being 'dumped into the north of England'
He said: 'I don't believe Starmer has got the guts to deal with it.'
He also told council workers to seek 'alternative careers' if they were in roles relating to climate change or diversity initiatives
The Tories were also squeezed in the south by the Lib Dems
Lib Dem leader Sir Ed Davey said the party had supplanted the Conservatives as the 'party of Middle England'
Sir Keir Starmer said: 'My response is simple: I get it.'
he added: 'Now is the time to crank up the pace on giving people the country they are crying out for.'
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Union Minister of State for Home Affairs Bandi Sanjay Kumar today made it clear that there is no question of holding talks with Maoists
He said there can be no talks with those who hold guns and kill innocents
He further said it was the Congress party that banned the Maoists
Speaking after unveiling a statue of a deity at Kothapalli in Karimnagar district of Telangana
the minister said talks cannot even be considered till Maoists give up their arms
He further said Maoists killed many leaders from various political parties including the Congress
and TDP using landmines and unjustly shot and killed innocent tribals on the pretext of being informers
Over the Central government decision on caste survey
Mr Sanjay said the decision is historic and calling it as the Congress victory is absurd
He added that the Congress is enacting dramas to divert attention from its failure in implementing the six guarantees given to people of Telangana
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Batch production of single-crystal two-dimensional (2D) transition metal dichalcogenides is one prerequisite for the fabrication of next-generation integrated circuits
Contemporary strategies for the wafer-scale high-quality crystallinity of 2D materials centre on merging unidirectionally aligned
an imperfectly merged area with a translational lattice brings about a high defect density and low device uniformity
which restricts the application of the 2D materials
Here we establish a liquid-to-solid crystallization in 2D space that can rapidly grow a centimetre-scale single-crystal MoS2 domain with no grain boundaries
The large MoS2 single crystal obtained shows superb uniformity and high quality with an ultra-low defect density
A statistical analysis of field effect transistors fabricated from the MoS2 reveals a high device yield and minimal variation in mobility
positioning this FET as an advanced standard monolayer MoS2 device
This 2D Czochralski method has implications for fabricating high-quality and scalable 2D semiconductor materials and devices
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All data are available in the main text or Supplementary Information. <a data-track="click" data-track-label="link" data-track-action="section anchor" href="/articles/s41563-024-02069-7#Sec19">Source data</a> are provided with this paper
Vapour-phase deposition of two-dimensional layered chalcogenides
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire
Two-dimensional semiconductors for transistors
Two‐dimensional semiconductors: from device processing to circuit integration
Wafer-scale highly oriented monolayer MoS2 with large domain sizes
Wafer-scale epitaxial growth of unidirectional WS2 monolayers on sapphire
Epitaxial growth of centimeter-scale single-crystal MoS2 monolayer on Au (111)
Process integration and future outlook of 2D transistors
Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth
Ultrafast growth of high‐quality monolayer WSe2 on Au
Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method
Chemical vapor deposition of large-size monolayer MoSe2 crystals on molten glass
Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys
Oxidative‐etching‐assisted synthesis of centimeter‐sized single‐crystalline graphene
Synthesis of two‐dimensional materials: how computational studies can help
Growth of germanium single crystals containing p−n junctions
Surface diffusion-limited growth of large and high-quality monolayer transition metal dichalcogenides in confined space of microreactor
Flux-assisted growth of atomically thin materials
Vapour–liquid–solid growth of monolayer MoS2 nanoribbons
Substrate engineering for wafer-scale two-dimensional material growth: strategies
Chemical vapor deposition of high‐quality large‐sized MoS2 crystals on silicon dioxide substrates
Oxygen-assisted chemical vapor deposition growth of large single-crystal and high-quality monolayer MoS2
Revealing the Brønsted-Evans-Polanyi relation in halide-activated fast MoS2 growth toward millimeter-sized 2D crystals
Suppressing nucleation in metal–organic chemical vapor deposition of MoS2 monolayers by alkali metal halides
Synthesis of high-performance monolayer molybdenum disulfide at low temperature
Oxide inhibitor-assisted growth of single-layer molybdenum dichalcogenides (MoX2
Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass
A library of atomically thin metal chalcogenides
Exploring atomic defects in molybdenum disulphide monolayers
Hopping transport through defect-induced localized states in molybdenum disulphide
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Study on the influence of the pulling rate on the axial and radial uniformity of gallium in Czochralski monocrystalline silicon crystal
Rational kinetics control toward universal growth of 2D vertically stacked heterostructures
Growing uniform graphene disks and films on molten glass for heating devices and cell culture
Growth of 12-inch uniform monolayer graphene film on molten glass and its application in PbI2-based photodetector
Transistors based on two-dimensional materials for future integrated circuits
Van der Waals‐interface‐dominated all‐2D electronics
Wafer-scale Bi-assisted semi-auto dry transfer and fabrication of high-performance monolayer CVD WS2 transistor
In 2022 IEEE Symposium on VLSI Technology and Circuits 290–291 (IEEE
Oriented lateral growth of two-dimensional materials on c-plane sapphire
12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture
Defect-engineered atomically thin MoS2 homogeneous electronics for logic inverters
From bulk to monolayer MoS2: evolution of Raman scattering
Hidden vacancy benefit in monolayer 2D semiconductors
Synthesis and optical properties of tetrapod-like zinc oxide nanorods
Low variability in synthetic monolayer MoS2 devices
Non-epitaxial single-crystal 2D material growth by geometric confinement
Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing
<a data-track="click" data-track-action="download citation references" data-track-label="link" rel="nofollow" href="https://citation-needed.springer.com/v2/references/10.1038/s41563-024-02069-7?format=refman&amp;flavour=references">Download references</a>
This work was supported by the National Natural Science Foundation of China (grant numbers 52225206
the National Key Research and Development Program of China (grant numbers 2022YFA1203800 and 2022YFA1203803)
the Beijing Nova Program (grant numbers 20220484145 and 20230484478)
the Fundamental Research Funds for the Central Universities (grant numbers FRF-TP-22-004C2
the State Key Lab for Advanced Metals and Materials (number 2023-Z05) and special support from the Postdoctoral Science Foundation (number 8206400173)
We are grateful for the help with STEM provided by Q
Chinese Academy of Sciences for the help with LEED
Tian at the National Center for Nanoscience and Technology for the low-temperature PL characteristics
Chinese Academy of Sciences for STM characteristics
Chen of the University of Science and Technology Beijing for the preparation of FETs
Yu at the Southern University of Science and Technology for constructive discussions
He of the Institute of Process Engineering
Chinese Academy of Sciences for constructive discussions
These authors contributed equally: He Jiang
Academy for Advanced Interdisciplinary Science and Technology
Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education
State Key Laboratory for Advanced Metals and Materials
University of Science and Technology Beijing
Beijing Advanced Innovation Center for Materials Genome Engineering
School of Materials Science and Engineering
Beijing Key Laboratory for Advanced Energy Materials and Technologies
created the MoS2 monolayers using the 2DCZ method
performed the AFM analysis and nano-scratch test
All authors discussed the results and commented on the paper
reviewer(s) for their contribution to the peer review of this work
The spreading process of the 2D liquid precursor
Comparison of growth and performance of large-area MoS2 materials with reported works
Benchmark comparison and comparison of defect density
Statistical distribution of the Raman peak difference; Raman line scan contour map covering a centimetre length range; and statistical bar graph showing defect density observed in HAADF-STEM images
Transfer characteristics of FET array; statistical distribution of SS
mobility and Vth; output characteristics; and transfer characteristics of the short-channel FET
a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law
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DOI: https://doi.org/10.1038/s41563-024-02069-7
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we will estimate the stock&#x27;s intrinsic value  by taking the forecast future cash flows of the company and discounting them back to today&#x27;s value
 We will use the Discounted Cash Flow (DCF) model on this occasion
 Models like these may appear beyond the comprehension of a lay person
 Remember though, that there are many ways to estimate a company&#x27;s value, and a DCF is just one method.  For those who are keen learners of equity analysis, the <a href="https://github.com/SimplyWallSt/Company-Analysis-Model/blob/master/MODEL.markdown#discounted-cash-flow-dcf" target="_blank" rel="nofollow noopener noreferrer">Simply Wall St analysis model here</a> may be something of interest to you
<a target="_blank" href="https://simplywall.st/stocks/us/materials/nyse-mos/mosaic" rel="noopener noreferrer" data-vars-link-type="cta" class="company-report-links"> See our latest analysis for Mosaic </a>
which simply means we have two different periods of growth rates for the company&#x27;s cash flows
Generally the first stage is higher growth
and the second stage is a lower growth phase
we have to get estimates of the next ten years of cash flows
but when these aren&#x27;t available we extrapolate the previous free cash flow (FCF) from the last estimate or reported value
We assume companies with shrinking free cash flow will slow their rate of shrinkage
and that companies with growing free cash flow will see their growth rate slow
We do this to reflect that growth tends to slow more in the early years than it does in later years
 A DCF is all about the idea that a dollar in the future is less valuable than a dollar today
 so we need to discount the sum of these future cash flows to arrive at a present value estimate: 
(&quot;Est&quot; = FCF growth rate estimated by Simply Wall St)Present Value of 10-year Cash Flow (PVCF) = US$6.1b
 The second stage is also known as Terminal Value
this is the business&#x27;s cash flow after the first stage
 For a number of reasons a very conservative growth rate is used that cannot exceed that of a country&#x27;s GDP growth
In this case we have used the 5-year average of the 10-year government bond yield (2.8%) to estimate future growth
In the same way as with the 10-year &#x27;growth&#x27; period
we discount future cash flows to today&#x27;s value
Terminal Value (TV)= FCF2034 × (1 + g) ÷ (r – g) = US$1.1b× (1 + 2.8%) ÷ (7.9%– 2.8%) = US$22b
Present Value of Terminal Value (PVTV)= TV / (1 + r)10= US$22b÷ ( 1 + 7.9%)10= US$10b
 The total value is the sum of cash flows for the next ten years plus the discounted terminal value
 In the final step we divide the equity value by the number of shares outstanding
 Compared to the current share price of US$28.0
the company appears   quite undervalued    at a 46% discount to where the stock price trades currently
  Valuations are imprecise instruments though
rather like a telescope - move a few degrees and end up in a different galaxy
 Now the most important inputs to a discounted cash flow are the discount rate
 You don&#x27;t have to agree with these inputs
I recommend redoing the calculations yourself and playing with them
 The DCF also does not consider the possible cyclicality of an industry
or a company&#x27;s future capital requirements
so it does not give a full picture of a company&#x27;s potential performance
 Given that we are looking at Mosaic as potential shareholders
the cost of equity is used as the discount rate
rather than the cost of capital (or weighted average cost of capital
Beta is a measure of a stock&#x27;s volatility
We get our beta from the industry average beta of globally comparable companies
which is a reasonable range for a stable business
 Although the valuation of a company is important
it  shouldn&#x27;t be the only metric you look at when researching a company
 It&#x27;s not possible to obtain a foolproof valuation with a DCF model
 Rather it should be seen as a guide to &quot;what assumptions need to be true for this stock to be under/overvalued?&quot;  For instance
if the terminal value growth rate is adjusted slightly
it can dramatically alter the overall result
  Can we work out why the company is trading at a discount to intrinsic value
there are three  further  aspects  you should consider: 
 PS. Simply Wall St updates its DCF calculation for every American stock every day, so if you want to find the intrinsic value of any other stock just <a target="_blank" href="https://simplywall.st/discover/investing-ideas/157/popular-view" rel="noopener noreferrer" data-vars-link-type="conclusion-grid" class="company-report-links">search here</a>
If you&#x27;re looking to trade Mosaic, open an account with the lowest-cost platform trusted by professionals, <a href="https://www.interactivebrokers.com/mkt/?src=swsN25&amp;url=%2Fen%2Fwhyib%2Foverview.php" target="_blank" rel="noopener noreferrer" class="tw-reset focus-outline text-[--s-link-primary-color-text] underline decoration-[--s-link-primary-color-underline] decoration-1 underline-offset-2 hover:decoration-[--s-link-primary-color-hover-underline] text-base">Interactive Brokers</a>
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Have feedback on this article? Concerned about the content? <a href="https://investor-research.typeform.com/to/wvg6MFri#feedback_token=MzY5NTI4Nzo0NGQ1Y2U0NTJiMjY3ZDNh&amp;company=Mosaic&amp;blueprintid=3695287" target="_blank" rel="nofollow noopener noreferrer">Get in touch</a> with us directly
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and does not take account of your objectives
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Note that our analysis may not factor in the latest price-sensitive company announcements or qualitative material
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Community and European Design Registration #2845206
Calgary-based <a href="https://veerum.com/" target="_blank" rel="noopener nofollow" title="">Veerum</a> has revealed that it closed a $12 million CAD Series B funding round on March 26 to help fuel its work on “digital twins,” or highly detailed virtual replicas
“This funding will allow us to enhance our platform’s capabilities
optimize delivery for clients of all sizes
and scale our offering to meet the growing demand for operationalizing digital reality.”
American energy tech investors Emerson Ventures and Veriten led the raise
Existing contributors BDC Capital and Evok Innovations also participated in the round
Veerum said the funding would help accelerate its plan to become the go-to company for “visual operations,” or managing industrial assets through realistic digital representations
This would include both feature upgrades as well as supporting a wider range of customers
and scale our offering to meet the growing demand for operationalizing digital reality,” CEO David Lod said in a statement
Veriten chief Maynard Holt said his company was “excited” to join the Series B as a company focused on backing “asset-heavy industries” like the energy sector
Emerson Ventures head Thurston Cromwell added that his VC firm felt Veerum was “setting a new standard” for how businesses managed their assets
RELATED: <a href="https://betakit.com/waabi-develops-realism-metric-to-gauge-reliability-of-autonomous-vehicle-simulators/" target="_blank" rel="noopener" title="">Waabi develops realism metric to gauge reliability of autonomous vehicle simulators</a>
Holt claimed that Veerum’s technology could let maintenance workers inspect facilities from afar
or let construction crews take a virtual “walk” through a jobsite without the safety risks of visiting in person
Veerum was founded in 2014. It received $7.4 million in a <a href="https://betakit.com/today-in-funding-certn-clover-flosonics-medical-veerum-chrysalabs-smedia/" target="_blank" rel="noopener" title="">2021 Series A round</a> led by BDC’s Industrial Innovation Venture Fund
BDC managing partner Joe Regan argued that the COVID-19 pandemic underscored the need for digital twins that could lower costs and boost productivity
Feature image courtesy Mos Design on <a href="https://unsplash.com/photos/an-industrial-factory-with-a-lot-of-lights-n7lhAQWAfTU" target="_blank" rel="noopener nofollow" title="">Unsplash</a>
The publication of record for Canadian technology and innovation news. <a href="https://betakit.com/about-us/" data-type="link" data-id="https://betakit.com/about-us/" target="_blank" rel="noreferrer noopener">Learn more</a>
Money Christmas will be broadcast via Bandcamp on Sunday
has announced a live-streamed performance titled Money Christmas
marking his first solo material in five years
The event will be broadcast on Bandcamp on Sunday
15th December at 7:00 PM GMT / 8:00 PM CET / 2:00 PM EST
who has spent the last few years touring and collaborating with long-time associates
Tickets for the live stream are priced at $7.99
and the music will initially be available exclusively through a QR code accompanying limited-edition merchandise sold via Bandcamp
The material will later see a vinyl release
The accompanying artwork for Money Christmas, titled Osanta Bin Lyin, comes from Spanish-Moroccan artist Anuar Khalifi, who bey has previously collaborated on live performances and the short film Part of Me. Bey’s announcement follows a prolific period that included the BEYONDOOM tour, paying tribute to the late <a href="//djmag.com/news/mf-dooms-mmfood-set-20th-anniversary-reissue-rare-remixes-and-interview-clips" rel="noopener" target="_blank">MF DOOM</a>
and recent festival appearances at South Facing Festival in London
Way Out West in Sweden and Liberation Music in Barcelona
Best known for his influential career in hip-hop
bey first rose to fame as one half of Black Star alongside Talib Kweli
His 1999 solo debut Black on Both Sides is widely considered a classic
he has released several critically acclaimed albums
Tickets and more details about Money Christmas are available via <a href="https://yasiinbey.bandcamp.com/merch/yasiin-bey-presents-money-christmas-a-live-stream-performance-of-new-material" rel="noopener noreferrer external nofollow" target="_blank">Bandcamp</a>
the Army is working to establish a new space MOS and branch
commander of Army Space and Missile Defense Command
Work also is underway to push critical space capabilities down to the tactical level
In remarks July 23 at a Coffee Series breakfast hosted by the Association of the U.S
Gainey acknowledged that the demand for troops who are experts in the space domain exceeds the capacity
and the tasks are being filled by soldiers in air and missile defense MOSs
“The way we operate right now is we pull soldiers from air defense
and we build crews based off of several different MOSs,” Gainey said
soldiers get certified in space operations but may only get to perform one mission before they go back to their own basic branch
“Everybody knows that’s probably not a good business model if you won't train the experts
so the concept we’ve developed is to take those authorizations that are already being provided to those different branches and change those soldiers to a 40D MOS
With soldiers training in space operations starting in basic training
“you get a professional noncommissioned officer corps
which we’re really excited about,” Gainey said
who has led Space and Missile Defense Command since Jan
said his command has worked with the Army’s other branches to develop the new MOS
a proposal that is being reviewed by Army senior leaders
A dedicated space MOS will help the Army push that expertise into formations across the Army
adding that his command is developing a space training strategy to focus on getting space capability and awareness into the Army’s formations
the rapid advancement of technology and an increasingly transparent battlefield
the Army and its sister services depend on space enablers such as satellite communications
The Army also is the military’s largest user of space
increasing its need to maintain its advantage in the final frontier
such as that resident in the multidomain task forces and within divisions and brigades
He pointed out that his command is working with Army Training and Doctrine Command to integrate space capability and awareness into initial entry training and “all the way through the training pipeline.”
By propagating space expertise throughout the force
training at the Army’s combat training centers can be made even more realistic by leveraging the capabilities resident in Space and Missile Defense Command to create a “denied or degraded environment” for squads to be able to react and respond
“Everybody has to be prepared to fight in a degraded
denied environment and be able to leverage space all the way down to the tactical level,” Gainey said
Yasiin Bey never embraced the conscious rap label
Yasiin Bey never embraced the conscious rap label. But no one embodied it quite like him. He came on the scene with Talib Kweli as <a href="https://www.udiscovermusic.com/stories/rediscover-mos-def-and-talib-kweli-are-black-star/">Black Star</a>
a duo that dropped their eponymous debut album in 1998
Merging Native Tongues aesthetics with themes of Afrocentrism
the project established Bey and Kweli as streetwise poets with a message – twin messiahs of so-called rap consciousness
Bey expanded his scope further with Black on Both Sides
a debut solo effort that’s as mesmerizing as it is eclectic
the album represented all the most positive stereotypes of conscious rap
while cementing Bey’s status as a virtuoso MC
Black on Both Sides is as sprawling as the African diaspora itself
shifting between apex boom bap (“Hip Hop”)
Fat Booty,” he coasts over an Aretha Franklin sample to unspool a tale of a romance that almost was
He recalls a woman placing her arms atop his shoulder blades while grafting the beat with the wit of a self-aware playboy: “I understand
‘Can I have a dance’ ain’t really that original.” Elsewhere
for the DJ Premier-produced “Mathematics,” he explains why it’s “dangerous to dream” in a world dictated by hard numbers instead of prayers
<a href="https://udiscover.lnk.to/mos-def-black-on-both-sides" target="_blank" rel="noopener">Listen to Mos Def&#8217;s Black on Both Sides now.</a>
He renders this all through spurts of metaphysical poetry
but this isn’t someone trying to sound smart; he’s trying to distill infinite
and he just so happens to be creative enough to find appropriately grand vessels for them
his stanzas can play out like a vision of everything that is
“Hip Hop is prosecution evidence/An out of court settlement
ad space for liquor/Sick without benefits/Luxury tenements/Choking the skyline
it&#8217;s low life getting tree-top high/It is a backwater remedy/Bitter and tender memory
Bey can be as technical as the best rap technicians
But tracks like “UMI Says” are exercises in freeform meditation
with his wailing murmurs and meandering bassline evoking warmth and spirituality
That experimentation continues on tracks like “Brooklyn,” where he opens with a Red Hot Chilli Peppers interpolation before sliding over instrumentals from three legendary New York acts from various enclaves of hip-hop
It’s at once a dexterous rhyme exhibition and a rebellion against classification
Bey didn’t color outside of the lines; he refused to acknowledge that they even existed in the first place
scribbling his thoughts and sensations in the most unwieldy
Situated between the post-Tupac and Biggie rapperverse and the shiny suit era
Black on Both Sides stood as a supposed antidote to rap commercialism
it was simply an instant classic – an album that appealed to both casual rap listeners and seasoned fanatics
The first Black Star album remains unimpeachable
Black on Both Sides stands as the moment Mighty Mos Def was at his mightiest
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We report a MoS2/PtSe2 heterostructure-based gas sensor for detecting trace levels of NO2 gas at room temperature
Both MoS2 and PtSe2 were synthesized by mechanical exfoliation
and the heterostructure was prepared using deterministic dry transfer method
Comprehensive characterization was performed using optical microscopy
field emission scanning electron microscopy
high resolution transmission electron microscopy
Raman spectroscopy and atomic force microscopy
The lateral shape of the heterostructure efficiently adsorbed NO2 molecules
The sensor exhibited limited response and recovery in dark conditions
the sensor showed remarkable response of 2180% and 117% towards 800 ppb and 50 ppb NO2
The theoretical limit of detection was found to be 3 ppb
and the sensitivity towards NO2 sensing was 3.217% ppb−1
the sensor demonstrated distinct selectivity
These findings are expected to significantly advance ongoing research on TMDC-based heterostructures for gas sensing application
it is essential to accurately detect trace level of NO2 gas with a precise selectivity
the weak interaction between the surface of MoS2 and gas molecules is still a limiting factor for achieving higher sensing response
a MoS2/PtSe2 heterostructure based gas sensor has not been reported to date
we explored a MoS2/PtSe2 heterostructure as a gas sensor
we fabricated the metal electrodes on SiO2/Si substrate and then synthesized both MoS2 and PtSe2 by mechanical exfoliation
the formation of their heterostructure was carried out using dry transfer process at room temperature
surface morphology and chemical composition of as prepared heterostructure was examined with optical microscope
field emission scanning electron microscopy (FESEM) and energy-dispersive X-ray spectroscopy (EDX) respectively
The crystallinity of the nano flakes was verified by high resolution transmission electron microscopy (HRTEM) and corresponding selected area electron diffraction (SAED) pattern
The structural fingerprint was confirmed with Raman spectroscopy
atomic force microscopy (AFM) was used to study the surface topography and thickness of the heterostructure
The electrical properties were evaluated by measuring its I-V characteristics
We tested the sensor for NO2 detection at room temperature with and without UV light assistance
assessing its selectivity and the impact of moisture on its performance
we proposed the gas sensing mechanism of our MoS2/PtSe2 heterostructure sensor towards NO2 detection
a highly doped Si substrate covered with a 285 nm SiO2 insulation layer was ultrasonically cleaned with acetone
isopropyl alcohol (IPA) and deionized (DI) water for ten minutes consecutively
the metal electrodes (100 nm Au/10 nm Ti) were patterned by laser lithography (DWL 66 fs
Heildelberg Instruments) followed by metal deposition using RF sputtering (Orion 8HV
we lifted-off the metal electrodes and successively cleaned them with IPA and DI water
MoS2 and PtSe2 flakes were mechanically exfoliated (ME) from their bulk crystals using scotch tape
and then transferred onto separate Polydimethylsiloxane (PDMS) films (GelPak) hold by a 4 by 4-inch glass slide
The alignment and transfer of the flakes over prepatterned electrodes on a SiO2/Si substrate were performed using the Karl Suss MJB4 mask aligner
The glass slide was attached to the mask aligner holder while the substrate was positioned on the chuck
The target flakes were selected to fit the gap between the electrodes
the PtSe2 flake was aligned followed by the MoS2 flake using micromanipulators
The alignment and the transfer process were monitored under an optical microscope integrated to the mask aligner
The physical structure of the MoS2/PtSe2 heterostructure was observed using a confocal microscope (Leica DM2500 Microsystems)
The surface morphology was analysed with field emission scanning electron microscope (FESEM) (Thermo Scientific
Scios 2 DualBeam) at a high vacuum mode with an electron acceleration voltage of 5 KV
The chemical composition of the active layer was examined using the energy-dispersive X-ray spectroscopy (EDX) integrated to the FESEM system
A JEOL F200 TEM ColdFEG operated at 200 kV was used for the high-resolution transmission electron microscopy (HRTEM) characterization
HRTEM images and electron diffraction patterns were acquired with a Gatan OneView camera
a CMOS-based and optical fiber-coupled detector of 4096 by 4096 pixels
Gatan Digital Micrograph program was used to process the HRTEM images
Raman spectroscopic measurements were conducted with Renishaw InVia spectrometer utilizing a long working distance objective lens with 50× magnification (0.75 numerical aperture) and 633 nm laser wavelength
The diffraction grating was set to 1200 lines/mm
and the laser power was maintained at 0.5 mW to prevent laser heating
roughness and surface topography of the flakes were evaluated by the atomic force microscopy (AFM) (Agilent 5500)
The AFM was operated in contact mode within 59.80 × 59.80 µm2 scan area
with a scan speed of 0.5 line/second and 512 scanning lines
The Keysight B2902A precision source/measure unit was used to verify the electrical properties of the heterostructure
Where Rgas and Rair denote the resistance recorded in the target analyte and dry air respectively
</a>a Cross-sectional schematic diagram of MoS2/PtSe2 heterostructure device
b FESEM image showing a small PtSe2 flake compared to large MoS2 flake
c EDX microanalysis highlighting the presence of Mo
the red marked area represents the location of EDX
d AFM topographical image of the sensing layer
(e) Corresponding height profile along the white line AB in (d)
indicating a thickness of approximately 14 nm
(f) Raman spectroscopic analysis showing characteristic peaks of MoS2 and PtSe2
g I–V characteristics displaying the formation of asymmetric Schottky contacts
</a>a Sensor resistance dynamics for 500 ppb NO2 without UV illumination and (b) with UV illumination
(c) Electrical response to different NO2 concentrations (50
(d) Quantification of response and recovery times for 800 ppb NO2
(e) Calibration curve obtained from different NO2 concentrations
which validate the reproducibility of our sensor
The data indicate that response time increases while the recovery time decreases with the reduction in NO2 concentrations
due to the diffusive capabilities of the target gas molecules
Where sB is the standard deviation of the baseline resistances
k is a numerical factor (with a recommended value is 3)
The calculated theoretical LOD was 3 ppb for our sensor
demonstrating its superior capability to detect very low concentrations of NO2
To evaluate the selectivity, our sensor was exposed to several reducing gases including 10 ppm of carbon monoxide (CO), 100 ppm of hydrogen (H2), 5 ppm of ammonia (NH3) and volatile organic compounds (VOCs) such as 10 ppm of ethanol (C2H6O) and 5 ppm of benzene (C6H6) according to their permissible toxicity level in the atmosphere. As shown in Fig. <a data-track="click" data-track-label="link" data-track-action="figure anchor" href="/articles/s41699-025-00548-2#Fig2">2f</a>
all these gases elicited very low responses compared to 50 ppb of NO2
the heterostructure material exhibits low sensitivity towards these gases
The selectivity test we conducted indicates that our sensor was sensitive enough to detect traces of nitrogen dioxide and was not affected by significantly higher concentrations of other environmental pollutants
This promising result ensures reliable detection to NO2 gas in both indoor and outdoor environments
</a>a Sensor resistance dynamics for different NO2 concentrations (100
and 800 ppb) at room temperature for 30% RH under UV illumination
b Comparison of sensor responses between ambient and 30% humid condition under UV illumination
c Comparison of responses with and without UV illumination for 500 ppb and 800 ppb NO2
our exfoliated MoS2/PtSe2 heterostructure gas sensor exhibits superior response towards trace levels of NO2 gas at room temperature
although response and recovery time need to be improved
</a>Schematic illustration of the proposed NO2 sensing mechanism under UV illumination for the MoS2/PtSe2 heterostructure
we successfully synthesized an MoS2/PtSe2 van der Waals heterostructure gas sensor for NO2 detection using mechanical exfoliation and the dry transfer method
This top-down synthesis process favors high yield and excellent crystallinity of the materials
resulting in a superior heterointerface due to the van der Waals forces
Although baseline drift was observed during gas measurements
we developed a UV-assisted method to accelerate recovery
The sensor exhibited very high response of up to 2180% for 800 ppb at room temperature
indicating high sensitivity towards trace levels of NO2
It also displayed exceptional selectivity compared to other reducing gases
The stability and reproducibility of the sensors were impressive over a period of 35 days
We observed a degraded response in humid environments even though there is a scope for improvement by utilizing some anti-humidity strategies in the future
one approach could be combining the gas sensor with a humidity sensor while the other one would consist of coating the hybrid 2D gas-sensitive layer with an ultra-thin film able to filter out water molecules
our research opens new possibilities in the development of TMDC heterojunction-based gas sensors for environmental monitoring
The authors declare that the data supporting the finding are available within the paper and its supplementary information
The corresponding authors can also provide data upon reasonable request
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This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No
101025770 and from the Universitat Rovira i Virgili (URV)
Funded partially by MICINN and FEDER under grant no
We also thank the Universitat Politècnica de Catalunya (UPC) for using their mask aligner and Dr
Gemma Lopez at UPC for her guidance in the cleanroom
is supported by the Catalan Institution for Research and Advanced Studies via the 2023 Editon of the ICREA Academia Award
wrote the paper and designed the experiments
performed all the characterizations and gas sensing measurements
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DOI: https://doi.org/10.1038/s41699-025-00548-2